Random Access Memory (RAM): Circuits and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 15 September 2024 | Viewed by 104

Special Issue Editors

E-Mail Website
Guest Editor
Departament d’Enginyeria Electrònica, Universitat Politècnica de Catalunya, Carrer de Colom, 11, 08028 Barcelona, Spain
Interests: neuromorphic computing; hardware security; emerging technologies; memristive devices; testing and diagnosis of defects in ICs

E-Mail Website
Guest Editor
Departament d’Enginyeria Electrònica, Universitat Politècnica de Catalunya, Carrer de Colom, 11, 08028 Barcelona, Spain
Interests: hardware security; emerging technologies; low-power design and testing of ICs

Special Issue Information

Dear Colleagues,

RRAM is one of the standout candidates among the emerging memory technologies that has the potential to replace current devices for high-performance computing and digital/analog circuit applications. In fact, the application fields of RRAM go far beyond its initial use as memory devices. Its non-volatility properties and multilevel storage capability (MLC) make RRAM well suited for in-memory computing (IMC). Furthermore, it can serve as synaptic elements in neural networks for its ability to tune their resistance. These two approaches are expected to overcome the limitations imposed by the separation of CPU and memory, causing the ‘von Neumann bottleneck’ and ‘memory wall’ problem. On the other hand, the inherent stochastic features of RRAM, such as probabilistic switching, inter- and intra-device variability, and RTN, provide interesting characteristics for the development of hardware security applications such as Physical Unclonable Functions (PUFs) and True Random Number Generators (TRNGs).

Although RRAM reports excellent properties in terms of its simple metal–insulator–metal (MIM) structure, easy compatibility with current CMOS technology, outstanding scalability, fast switching speed, and long data retention, there are still some problems related to controllability, variability, and endurance which may limit its extensive application. There is currently extensive research devoted to overcoming such limitations and to developing RRAM-based applications. For this purpose, this Special Issue invites submissions of both original research work and review papers related to RRAM-based circuits and applications.

Dr. Daniel Arumí
Dr. Salvador Manich
Guest Editors

Manuscript Submission Information

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  • RRAM
  • OxRRAM
  • resistance switching
  • neuromorphic computing
  • in-memory computing
  • hardware security
  • multilevel cells

Published Papers

This special issue is now open for submission.
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