Random Access Memory (RAM): Circuits and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 15 September 2024 | Viewed by 514

Special Issue Editors


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Guest Editor
Departament d’Enginyeria Electrònica, Universitat Politècnica de Catalunya, Carrer de Colom, 11, 08028 Barcelona, Spain
Interests: neuromorphic computing; hardware security; emerging technologies; memristive devices; testing and diagnosis of defects in ICs

E-Mail Website
Guest Editor
Departament d’Enginyeria Electrònica, Universitat Politècnica de Catalunya, Carrer de Colom, 11, 08028 Barcelona, Spain
Interests: hardware security; emerging technologies; low-power design and testing of ICs

Special Issue Information

Dear Colleagues,

RRAM is one of the standout candidates among the emerging memory technologies that has the potential to replace current devices for high-performance computing and digital/analog circuit applications. In fact, the application fields of RRAM go far beyond its initial use as memory devices. Its non-volatility properties and multilevel storage capability (MLC) make RRAM well suited for in-memory computing (IMC). Furthermore, it can serve as synaptic elements in neural networks for its ability to tune their resistance. These two approaches are expected to overcome the limitations imposed by the separation of CPU and memory, causing the ‘von Neumann bottleneck’ and ‘memory wall’ problem. On the other hand, the inherent stochastic features of RRAM, such as probabilistic switching, inter- and intra-device variability, and RTN, provide interesting characteristics for the development of hardware security applications such as Physical Unclonable Functions (PUFs) and True Random Number Generators (TRNGs).

Although RRAM reports excellent properties in terms of its simple metal–insulator–metal (MIM) structure, easy compatibility with current CMOS technology, outstanding scalability, fast switching speed, and long data retention, there are still some problems related to controllability, variability, and endurance which may limit its extensive application. There is currently extensive research devoted to overcoming such limitations and to developing RRAM-based applications. For this purpose, this Special Issue invites submissions of both original research work and review papers related to RRAM-based circuits and applications.

Dr. Daniel Arumí
Dr. Salvador Manich
Guest Editors

Manuscript Submission Information

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Keywords

  • RRAM
  • CBRAM
  • OxRRAM
  • resistance switching
  • neuromorphic computing
  • in-memory computing
  • hardware security
  • multilevel cells

Published Papers (1 paper)

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Research

11 pages, 7619 KiB  
Article
On the Asymmetry of Resistive Switching Transitions
by Guillermo Vinuesa, Héctor García, Eduardo Pérez, Christian Wenger, Ignacio Íñiguez-de-la-Torre, Tomás González, Salvador Dueñas and Helena Castán
Electronics 2024, 13(13), 2639; https://doi.org/10.3390/electronics13132639 - 5 Jul 2024
Viewed by 342
Abstract
In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, [...] Read more.
In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, less energy) as temperature rises, with the reset process being much more temperature sensitive. The main conduction mechanism in both resistance states is Space-charge-limited Conduction, but the high conductivity state also shows Schottky emission, explaining its temperature dependence. Moreover, the temporal evolution of these transitions reveals clear differences between them, as their current transient response is completely different. While the set is sudden, the reset process development is clearly non-linear, closely resembling a sigmoid function. This asymmetry between switching processes is of extreme importance in the manipulation and control of the multi-level characteristics and has clear implications in the possible applications of resistive switching devices in neuromorphic computing. Full article
(This article belongs to the Special Issue Random Access Memory (RAM): Circuits and Applications)
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