Special Issue "Recent Advances in Power Electronic Systems Enhanced by Wide Bandgap Technology"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: 31 December 2021.

Special Issue Editor

Prof. Dr. Michal Frivaldský
E-Mail Website
Guest Editor
Department of Mechatronics and Electronics (DME),University of Zilina, Zilina, Slovakia
Interests: power electronic systems; switched mode power supplies; resonant converters; power semiconductor devices; wireless power transfer; power density; efficiency optimization; thermal management; thermal modelling; lifetime optimization

Special Issue Information

Dear Colleagues,

The Guest Editor is inviting submissions to a Special Issue of Electronics on the subject area of the use of GaN and SiC technology to improve the performance of power semiconductor systems. Current trends within material engineering and development of perspective semiconductor devices have proven that wide bandgap technology represents the way to marry the contradictory requirements for power converters, i.e., high efficiency and simultaneously high-power density. There are numerous application areas where GaN power transistors can meet the strict requirements defined for the design of power semiconductor systems, i.e., from consumer applications up to industrial power converters. There is no limitation regarding where wide bandgap devices can be utilized, tested, and evaluated as the best in class choice of designers and electrical engineers. Thermal performance and reliability are also increasing demands for the application of power converters, while wide bandgap technology together with novel design approaches enable achieving satisfactory results. This Special Issue will focus on but is not strictly limited to:

  • GaN and SiC power device testing, simulation, and modelling;
  • High switching frequency power converter topologies;
  • Progressive topologies utilizing GaN and SiC power transistors;
  • Control techniques and control systems for high switching frequency power converter topologies;
  • Design issues related to advanced power semiconductor converters using SiC and GaN technology;
  • Optimized driving circuits for wide bandgap devices;
  • GaN and SiC power modules for low voltage and high voltage applications;
  • Thermal performance of power converters enhanced by wide bandgap devices;
  • Magnetic component design issues related to the use of wide bandgap devices.

Prof. Dr. Michal Frivaldský
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (1 paper)

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Evaluation of the Perspective Power Transistor Structures on Efficiency Performance of PFC Circuit
Electronics 2021, 10(13), 1571; https://doi.org/10.3390/electronics10131571 - 30 Jun 2021
Viewed by 308
The aim of this work is to investigate the influence of circuit elements on the properties of the selected power factor correction (PFC) topology. Active or passive PFC serves to increase the power factor (PF) and reduce the total harmonic distortion (THD) of [...] Read more.
The aim of this work is to investigate the influence of circuit elements on the properties of the selected power factor correction (PFC) topology. Active or passive PFC serves to increase the power factor (PF) and reduce the total harmonic distortion (THD) of the mains current. As a result, the distribution network is lightened due to its interference caused by connected electronic devices. An important indicator of all electronic converters is efficiency. Therefore, the work deals with the analysis of possible efficiency improvements in conjunction with the use of technologically new active components. Detailed experimental analyses and optimization procedures are performed in terms of the influence of transistor structures (SiC and GaN) on the qualitative indicators of the proposed PFC converter for a wide operating spectrum. The synthesis of the obtained results is given, together with recommendations for optimal selection and optimal design of PFC main circuit elements with regard to achieving peak efficiency values. Full article
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