Advances and Applications in (Ultra-)Wide-Bandgap Semiconductors
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: 15 October 2026 | Viewed by 208
Editors
Interests: wide-bandgap semiconductor device; GaN power device; fabrication and process; semiconductor device physics; reliability and stability
Interests: Wide-bandgap semiconductor device; power device; power ICs
Interests: GaN power semiconductor device, process and Ics
Special Issue Information
Dear Colleagues,
The rapid evolution of (ultra-)wide-bandgap semiconductors—from established SiC and GaN to emerging Ga2O3, AlN and diamond—is redefining the performance boundaries of high-power electronics, RF/millimeter-wave systems and deep-UV optoelectronics. This Special Issue, titled "Advances and Applications in (Ultra-)Wide-Bandgap Semiconductors," aims to provide a comprehensive platform for latest breakthroughs in the physics, design, fabrication and application of WBG and UWBG technologies.
The scope of this issue encompasses the following:
Material Synthesis and Epitaxy: Novel growth techniques, growth kinetics, fundamental growth mechanisms and defect engineering for WBG/UWBG materials.
Advanced Device Design: Innovative architectures for power, RF, photonic and sensing applications.
Device physics: Fundamental insights into trap states, carrier transport mechanisms, high-field phenomena and other physical properties unique to (U)WBG systems.
Device Fabrication: Advanced processing technologies for (U)WBG semiconductors.
Reliability and Characterization: Novel insights into device degradation, long-term reliability and advanced thermal management strategies—critical hurdles for the commercial adoption of emerging devices.
System-Level Integration: High-efficiency power converters, RF/millimeter-wave circuits, integrated optoelectronics, CMOS-compatible platforms and thermal solutions tailored for (U)WBG semiconductors.
Purpose and Relationship to the Literature:
By presenting established WBG breakthroughs alongside nascent UWBG innovations, we aim to provide a holistic "roadmap" for the next generation of semiconductor electronics. We invite researchers to contribute original research and comprehensive reviews that address these multi-faceted challenges for the future of high-performance electronics.
Dr. Mengyuan Hua
Dr. Jin Wei
Dr. David Zhou
Dr. Kailin Ren
Guest Editors
Manuscript Submission Information
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Keywords
- (Ultra-)wide-bandgap semiconductors (UWBG/WBG)
- epitaxial growth and kinetics
- defect engineering
- device physics
- reliability
- power devices
- RF/millimeter-wave electronics
- optoelectronics
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