Advanced CMOS Technologies and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (15 May 2025) | Viewed by 282

Special Issue Editors

Department of Physics, University of California, Santa Barbara, CA 93106-9530, USA
Interests: radiation-hard high-speed optical transceiver ASICs; precision time measurement ASIC

E-Mail Website
Guest Editor
College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China
Interests: material detector front-end; readout design; mixed-signal ASIC circuit design applied to high energy physics experiments and medical detection

Special Issue Information

Dear Colleagues,

Complementary metal-oxide-semiconductor (CMOS) technology remains at the heart of modern electronics, driving innovations in integrated circuits, sensor systems, and communication technologies. CMOS technology has evolved significantly over the years, driven by the continuous demand for smaller, faster, and more energy-efficient devices across various industries, including consumer electronics, telecommunications, automotive, healthcare, and industrial automation.

This Special Issue on Advanced CMOS technologies and applications explores the cutting-edge developments, challenges, and prospects in CMOS technology. The focus will be on innovative approaches to enhance CMOS performance, power efficiency, scaling, and reliability, as well as novel applications where CMOS plays a critical role.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Advanced CMOS scaling techniques (e.g., FinFET, GAAFET, SOI);
  • Low-power CMOS design methodologies;
  • CMOS for emerging applications: IoT, AI, 5G, and beyond;
  • Mixed-signal and RF CMOS circuits and systems;
  • Reliability, variability, and thermal management in CMOS devices;
  • CMOS integration with novel materials (e.g., graphene, 2D materials);
  • CMOS for biomedical and sensor applications;
  • Photonics and optoelectronic integration with CMOS;
  • Advanced fabrication and process technologies for CMOS scaling;
  • Modeling and simulation techniques for future CMOS designs.

We look forward to receiving your contributions.

Dr. Xing Huang
Dr. Ping Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced CMOS technologies
  • CMOS scaling techniques
  • low-power CMOS
  • mixed-signal CMOS design
  • RF CMOS
  • CMOS sensor applications
  • CMOS biomedical applications
  • CMOS for IoT
  • AI and CMOS integration
  • advanced CMOS package technologies

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Review

20 pages, 2183 KiB  
Review
Bulk-Driven CMOS Differential Stages for Ultra-Low-Voltage Ultra-Low-Power Operational Transconductance Amplifiers: A Comparative Analysis
by Muhammad Omer Shah, Andrea Ballo and Salvatore Pennisi
Electronics 2025, 14(10), 2085; https://doi.org/10.3390/electronics14102085 - 21 May 2025
Viewed by 13
Abstract
Energy-efficient integrated circuits require scaled-down supply voltages, posing challenges for analog design, particularly for operational transconductance amplifiers (OTAs) essential in high-accuracy CMOS feedback systems. Below 1 V, gate-driven OTAs are limited in common-mode input range and minimum supply voltage. This work investigates CMOS [...] Read more.
Energy-efficient integrated circuits require scaled-down supply voltages, posing challenges for analog design, particularly for operational transconductance amplifiers (OTAs) essential in high-accuracy CMOS feedback systems. Below 1 V, gate-driven OTAs are limited in common-mode input range and minimum supply voltage. This work investigates CMOS Bulk-Driven (BD) sub-threshold techniques as an efficient alternative for ultra-low voltage (ULV) and ultra-low power (ULP) designs. Although BD overcomes MOS threshold voltage limitations, historical challenges like lower transconductance, latch-up, and layout complexity hindered its use. Recent advancements in CMOS processes and the need for ULP solutions have revived industrial interest in BD. Through theoretical analysis and computer simulations, we explore BD topologies for ULP OTA input stages, classifying them as tailed/tail-less and class A/AB, evaluating their effectiveness for robust analog design, while offering valuable insights for circuit designers. Full article
(This article belongs to the Special Issue Advanced CMOS Technologies and Applications)
Show Figures

Figure 1

Back to TopTop