Advanced Electronic and Photonic Devices from the International Conference on Next-Generation Electronics & Photonics (INGEP 2024)

A special issue of Electronics (ISSN 2079-9292).

Deadline for manuscript submissions: closed (15 November 2024) | Viewed by 3071

Special Issue Editors


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Guest Editor
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: sensors and actuators; wireless sensors; wearable electronics; energy harvesting technology; self-powered electronics
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: resonators; SAW; FBAR; wearable/implantable electronics
Special Issues, Collections and Topics in MDPI journals
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: wearable electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The International Conference on Next-Generation Electronics & Photonics (INGEP 2024) will be held in Hangzhou, China, on 11–14 April 2024. The INGEP 2024 will provide a platform for experts, scholars and researchers from all over the world to convene and share novel ideas on next-generation electronics and photonics.

The INGEP 2024 features plenary, invited talks and oral presentations by scientists in the fields of nanomaterials, advanced microelectronics and photonic devices. The topics covered are listed below:

  • Advanced electronic devices, memory devices, electronic systems;
  • Low-dimension materials, devices and technologies;
  • Wide band gap semiconductor materials, devices and technologies;
  • Flexible and wearable electronics;
  • Optoelectronic devices and systems and advanced display technologies;
  • Nanophotonics;
  • Integrated quantum photonics;
  • Photovoltaic materials and technologies;
  • Advanced sensors, actuators, MEMS;
  • BioMEMS, biomedical devices and microfluidics;
  • Energy harvesting technologies;
  • Wireless sensing technologies.

The purpose of the Special Issue is to provide a platform for those who wish to publish their findings and achievements in a journal. The focus of this Special Issue is on electronic and photonic devices and systems.

Prof. Dr. Jikui Luo
Prof. Dr. Shurong Dong
Dr. Zhen Cao
Guest Editors

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Keywords

  • low dimensional materials
  • quantum dots
  • optical devices
  • nanodevices
  • energy harvesting
  • wireless sensing
  • sensors and actuators
  • microfluidics
  • biosensors
  • flexible electronics

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Published Papers (1 paper)

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Research

14 pages, 8885 KiB  
Article
A High-Speed Silicon Ring Modulator with a Large Working Wavelength Range
by Fan Xu, Shun Zhang, Xiangyu Gao, Wei Wang, Wencheng Yue, Qiang Xu, Shuxiao Wang and Yan Cai
Electronics 2024, 13(15), 2890; https://doi.org/10.3390/electronics13152890 - 23 Jul 2024
Cited by 1 | Viewed by 2459
Abstract
With the advantages of high speed, small size, and easy integration, the silicon photonic resonant ring modulator has gradually become a critical device for emerging integrated optical platforms. Ring modulators are primarily used in optical communications, optical computing, artificial intelligence, and other fields. [...] Read more.
With the advantages of high speed, small size, and easy integration, the silicon photonic resonant ring modulator has gradually become a critical device for emerging integrated optical platforms. Ring modulators are primarily used in optical communications, optical computing, artificial intelligence, and other fields. In this work, the proposed ring modulator can operate in both the O- and C-bands. The 3 dB electro-optical (EO) bandwidth of the ring modulator is 39 GHz and 34 GHz at −4 V in the O-band and C-band, respectively. The modulation efficiency of the device is 0.92 V·cm and 0.95 V·cm in the O-band and C-band, respectively. The eye diagram of an optical output signal from the device is tested using a 100 Gbit/s non-return-to-zero (NRZ) input signal with a 2.5 Vpp in both the O-band and C-band. The modulation speed can reach 140 Gb/s and 120 Gb/s in the O-band and C-band with four-level pulse amplitude modulation (PAM-4) formats at a voltage swing of 2.5 Vpp, respectively. Full article
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