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Electronics
Special Issues
2D Materials-Based Devices and Applications
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2D Materials-Based Devices and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (20 August 2024) | Viewed by 4011

Special Issue Editors

Dr. Mingyuan Chen

E-Mail Website
Guest Editor
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL 36849, USA
Interests: two-dimensional materials; nanophotonics; nano-optics; optoelectronics; electronics; heterostructures
Dr. Feng Wu

E-Mail Website
Guest Editor
School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China
Interests: nanophotonics; photonic crystals; bound states in the continuum; strong coupling; metamaterials; metasurfaces; multilayers; subwavelength gratings; Goos–Hänchen shift; photonic spin Hall effect; two-dimensional materials
Special Issues, Collections and Topics in MDPI journals
Dr. Qijun Zong

E-Mail Website
Guest Editor
School of Physics, Nanjing University, Nanjing 21008, China
Interests: two-dimensional materials; low-temperature transport; transition metal dichalcogenide heterostructures; electronics
Dr. Jialiang Shen

E-Mail Website
Guest Editor
Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL 36849, USA
Interests: two-dimensional materials; nanophotonics; optoelectronics; machine learning; scanning probe technology; spectroscopy; metamaterials
Dr. Nurul Azam

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Auburn University, Auburn, AL 36849, USA
Interests: two-dimensional quantum materials; growth dynamics of 2D materials; laser; laser processing; optical characterization

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials have attracted tremendous research interest due to their unique optical, electronic, thermal, and mechanical properties. Two-dimensional materials comprise a large family with a very broad range of properties that can be easily altered by various physical, chemical, and heterostructuring strategies, which opens unprecedented opportunities for various kinds of novel device applications such as in field-effect transistors, memory, sensors, ultrasensitive photodetectors, logic electronic/optoelectronics devices, spintronic devices, and so on, which are difficult to construct using conventional bulk materials. Intensive research into 2D materials is expected to lead to the discovery of more functional, economical, and sustainable novel materials and devices with enhanced properties that will significantly benefit industries and society at large.

This Special Issue aims to present original, state-of-the-art articles on physics, devices, mechanisms, fabrication technologies, and applications involving 2D materials, including theoretical, numerical, and experimental studies. We welcome both original research and review articles.

Topics of interest include, but are not limited to:

  • Synthesis, fabrication, characterization, and properties of 2D materials.
  • Device physics and integration of 2D materials.
  • Light–matter interactions involving 2D materials.
  • Spectroscopy and imaging involving 2D materials.
  • Energy storage applications using 2D materials.
  • Wearable devices containing 2D materials.
  • Biochemical sensors containing 2D materials.
  • Bound states in the continuum in nanostructures containing 2D materials.
  • Quantum technology involving 2D materials.
  • Machine learning methods involving 2D materials.

Dr. Mingyuan Chen
Dr. Feng Wu
Dr. Qijun Zong
Dr. Jialiang Shen
Dr. Nurul Azam
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • two-dimensional materials
  • nanotechnology
  • devices
  • energy storage
  • light-matter interactions
  • spectroscopy and imaging
  • bound states in the continuum
  • quantum technology
  • machine learning

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

12 pages, 921 KiB  
Article
Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2
by Wendy Liliana Martínez-Angeles, Orfil González-Reynoso, Gregorio Guadalupe Carbajal-Arizaga and Mario Alberto García-Ramírez
Electronics 2024, 13(20), 4008; https://doi.org/10.3390/electronics13204008 - 12 Oct 2024
Viewed by 1859
Abstract
This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the [...] Read more.
This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices. Full article
(This article belongs to the Special Issue 2D Materials-Based Devices and Applications)
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13 pages, 7473 KiB  
Article
Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors
by Xiaojie Lu, Hongxia Guo, Zhifeng Lei, Chao Peng, Zhangang Zhang, Hong Zhang, Teng Ma, Yahui Feng, Wuying Ma, Xiangli Zhong, Jifang Li, Yangfan Li and Ruxue Bai
Electronics 2023, 12(23), 4837; https://doi.org/10.3390/electronics12234837 - 30 Nov 2023
Viewed by 1400
Abstract
In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × [...] Read more.
In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance. Full article
(This article belongs to the Special Issue 2D Materials-Based Devices and Applications)
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