Wide-Bandgap-Semiconductor-Based Microelectronics

Dear Colleagues,

Wide-bandgap (WBG) semiconductors have become very popular in recent years due to continuous research and growing commercial interest. While SiC-based semiconductors drive sustainable mobility and industrial markets, GaN semiconductors find their place in lower-voltage applications such as consumer electronics, data centres, telecommunications, and aerospace. In addition, other promising ultra-WBG semiconductors based on diamond, AlN, and Ga2O3 have recently been introduced to overcome the technological limitations of SiC and GaN. Research on WBG semiconductors is crucial for developing sophisticated and highly efficient electronic systems, but many challenges still need to be addressed to exploit WBG technology to its full potential, e.g.:

• Understanding reliability and degradation phenomena (dynamic Ron, threshold voltage instability, dielectric discharge);
• Improving short-circuit robustness by understanding failure mechanisms and providing innovative protection techniques;
• Developing very low-inductance packages and monolithically integrated devices;
• Thermal management optimization;
• Evaluating the effects of cosmic radiation on degradation and failure;
• System-level optimization (layout, gate driver…).

The aim of this Special Issue is to present the latest technology advancements on WBG semiconductors, with particular interest on GaN and latest WBG materials, at both device- and system- levels. Original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

• manufacturing processes and packaging;
• finite-element simulations of WBG semiconductors;
• thermal analysis and optimization;
• device- and system-level reliability;
• robustness to short-circuit;
• improved layout design and gate driver optimization for WBG devices;
• radiation

Your contribution is essential to the increasing current knowledge on WBG semiconductors and shaping the future of electronics, which is intrinsically tied to WBG technology. Therefore, I look forward to receiving your contributions in the Special Issue “Wide-Bandgap Semiconductor-based Microelectronics”.

Dr. Simone Palazzo
Prof. Dr. Giovanni Busatto
Guest Editors

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• GaN HEMTs
• ultra-WBG semiconductors
• finite-element simulation
• reliability
• thermal management
• packaging
• short-circuit
• cosmic rays
• device modelling