Phase Engineering of Two-Dimensional Lattices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystal Engineering".

Deadline for manuscript submissions: closed (29 December 2022) | Viewed by 4115

Special Issue Editors


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Guest Editor
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
Interests: low dimentional materials; phase transitions; scanning tunneling microsopy; atom manipulation
Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China
Interests: surface physics; 2D materials

E-Mail Website
Guest Editor
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
Interests: superconductivity; scanning tunneling microscopy

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) systems, including van de Waals 2D materials, semiconductor surface reconstructions, etc., are some of the hottest material platforms in the past two decades due to their rich physical properties and potential for numerous applications. One major research direction focuses on multi-phase behaviours, which are rooted in the competition of the lattice, charge, and spin degree of freedom in these systems. Many intriguing electronic phases, including change/spin density wave, superconductivity, etc., can be produced when the system undergoes spontaneous symmetry-breaking at low temperature. The ground state of a 2D lattice is changed by tuning the system parameters, such as element substitution, charge doping or strain, while different sample preparation routes or external stimulations, such as light or electrical field, stabilise meta-state phases. Developing phase-tuning methods, characterising the phase diagram, and revealing the driven mechanism are all critical for exploring new physics and developing novel devices.

Based on these concepts, this Special Issue of Crystals, “Phase engineering of two-dimensional lattices” will provide a platform for researchers to report results and findings in tuning the phase of 2D lattices. Topics include (but are not limited to):

1) Phase transitions of a 2D van der Waals material or surface reconstruction.

2) Low-temperature phases such as superconductivity and change/spin density wave.

3) Charge doping/element substitution/strain method to a 2D lattice.

4) Growth method to produce different phases of 2D lattice.

5) Meta-stable phase stabilised by light or an electrical field.

6) Phase transition mechanisms of a 2D lattice

Dr. Fangfei Ming
Dr. Yaping Ma
Dr. Xuefeng Wu
Guest Editors

Manuscript Submission Information

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Keywords

  • two-dimensional lattices
  • surface reconstruction
  • phase transition
  • charge doping
  • scanning tunneling microscopy
  • meta-stable phase

Published Papers (3 papers)

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Research

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8 pages, 3173 KiB  
Article
Changes in the Optical Properties of an M-Doped (M = Pt, Ti) hBN Sheet and CO2 Capturing
by Juan Manuel Ramírez-de-Arellano, Ali Fransuani Jiménez-González and Luis Fernando Magaña
Crystals 2022, 12(12), 1773; https://doi.org/10.3390/cryst12121773 - 07 Dec 2022
Cited by 1 | Viewed by 1330
Abstract
We performed ab initio DFT calculations to explore the optical properties of a hexagonal boron nitride (hBN) monolayer, doped with a Ti or a Pt atom. Ti doping increases the adsorption capability of the boron nitride surface for capturing CO2. Both [...] Read more.
We performed ab initio DFT calculations to explore the optical properties of a hexagonal boron nitride (hBN) monolayer, doped with a Ti or a Pt atom. Ti doping increases the adsorption capability of the boron nitride surface for capturing CO2. Both doping types increase the optical absorption and reflectivity of the hBN surface in the infrared and visible regions. For the UV region, a B vacancy increases the absorption of the hBN sheet. Captured CO2 bears substantial changes in the optical absorption and reflectivity spectra of the system considered. Full article
(This article belongs to the Special Issue Phase Engineering of Two-Dimensional Lattices)
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10 pages, 2512 KiB  
Article
Monolayer TiNI with Anisotropic Optical and Mechanical Properties
by Shu-Juan Li, Min Li, Cheng-Gong Zhang, Kun-Yue Shi and Pei-Ji Wang
Crystals 2022, 12(9), 1202; https://doi.org/10.3390/cryst12091202 - 26 Aug 2022
Viewed by 1154
Abstract
Anisotropic monolayer materials have always been investigated by physical researchers. In this paper, we report a stable two-dimensional TiNI monolayer with anisotropic mechanical, optical, and electrical conduction properties. By combining the methods of non-equilibrium Green’s function and density function theory, we obtain two-dimensional [...] Read more.
Anisotropic monolayer materials have always been investigated by physical researchers. In this paper, we report a stable two-dimensional TiNI monolayer with anisotropic mechanical, optical, and electrical conduction properties. By combining the methods of non-equilibrium Green’s function and density function theory, we obtain two-dimensional TiNI materials with mechanical, optical, and electronic transport properties that depend on the lattice orientation. In addition, the maximum Young’s modulus of the single-layer TiNI can reach 160 N/m2. The calculate result of electrical transport properties also indicates the anisotropic electron transport performance of TiNI monolayer. Moreover, the electron transport intensity along the direction b is about six times the conduction intensity along the direction a. The anisotropic mechanical and optical properties, as well as the tunable band gap and special electron transport characteristics, enable a promising future for monolayer TiNI materials in nano-optoelectronics. Full article
(This article belongs to the Special Issue Phase Engineering of Two-Dimensional Lattices)
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Review

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12 pages, 2998 KiB  
Review
Summary of the Basic Free Electron Transport Characteristics in Donor Doped Silicon
by Vilius Palenskis
Crystals 2022, 12(11), 1666; https://doi.org/10.3390/cryst12111666 - 19 Nov 2022
Cited by 2 | Viewed by 1247
Abstract
A present summary is assigned to present the transport characteristics of the free randomly moving (RM) electrons in silicon at any doping level by phosphorous donors. The application of the Fermi-Dirac statistics and stochastic description of the free RM electrons lead to obtaining [...] Read more.
A present summary is assigned to present the transport characteristics of the free randomly moving (RM) electrons in silicon at any doping level by phosphorous donors. The application of the Fermi-Dirac statistics and stochastic description of the free RM electrons lead to obtaining the general expressions of conductivity, the effective density of the free RM electrons, their diffusion coefficient and the drift mobility, which are valid for silicon with any doping level. It is shown that drift mobility of the free RM electrons considerably exceeds the Hall mobility at heavy doping, and that the Einstein relation is fundamental and is conserved at any level of degeneracy. It is estimated what part of electrons in the conduction band of heavily doped silicon is not free and is coupled with phosphorous ions. The main conclusions and formulations can be applicable for holes in acceptor-doped silicon, and other homogeneous materials with one type of the free RM charge carriers as well. Full article
(This article belongs to the Special Issue Phase Engineering of Two-Dimensional Lattices)
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