Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.7
3.4
Journals
Coatings
Special Issues
Semiconductor Thin Films: Fabrication, Characterization and Applications
share announcement

Semiconductor Thin Films: Fabrication, Characterization and Applications

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 9150

Special Issue Editor

Prof. Dr. Min-Hung Lee

E-Mail Website
Guest Editor
Graduate Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University (NTNU), Taiwan
Interests: advanced devices; high power devices; solar cell; thin-film devices; flexible electronics

Special Issue Information

Dear Colleagues,

The scope of this Special Issue is semiconductor thin films, focusing on the research in the field of semiconductor materials for various functions and /or applications. In the Architecture Intelligence (AI) and 5G era, the semiconductor devices are trending toward low power, high speed, and intelligence through novel electronics and/or optoelectronics development. The aim of this Special Issue is to present the latest experimental and theoretical developments of the semiconductor thin films for emerging technology for More-Moore or More-than-Moore, through a combination of original research papers and review articles from leading groups around the world. We are pleased to invite you to submit your recent research articles to this Special Issue “Semiconductor Thin Films: Fabrication, Characterization and Applications”.

In particular, the topics of interest include, but are not limited to:

  • Advanced CMOS, process, and nanopatterning
  • Photonics, optoelectronics, energy harvesting, and others
  • TFT, wearable, and organic electronics
  • Memory technology and reliability physics
  • Non-silicon/III-V/2D/power and other materials
  • Analog RF/MEMS and others New concepts and new model/computing

Prof. Dr. Min-Hung Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

11 pages, 2975 KiB  
Article
Compositional, Structural, Morphological, and Optical Properties of ZnO Thin Films Prepared by PECVD Technique
by Noureddine Hacini, Mostefa Ghamnia, Mohamed Amine Dahamni, Abdelwaheb Boukhachem, Jean-Jacques Pireaux and Laurent Houssiau
Coatings 2021, 11(2), 202; https://doi.org/10.3390/coatings11020202 - 10 Feb 2021
Cited by 15 | Viewed by 2318
Abstract
ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400 °C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron [...] Read more.
ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400 °C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties were carried out by UV-visible spectroscopy. XPS spectra showed typical peaks of Zn(2p3/2), Zn(2p1/2), and O(1s) of ZnO with a slight shift attributed to the substrate temperature. XRD analysis revealed hexagonal wurtzite phases with a preferred (002) growth orientation that improved with temperature. Calculation of grain size and dislocation density revealed the crystallization improvement of ZnO when the substrate temperature varied from 200 to 400 °C. SEM images of ZnO films showed textured surfaces composed of grains of spherical shape uniformly distributed. The transmittance yields are reaching 80%, and the values of the band-gap energy indicate that the ZnO films prepared by PECVD present transparent and semiconducting properties. Full article
(This article belongs to the Special Issue Semiconductor Thin Films: Fabrication, Characterization and Applications)
►▼ Show Figures

Figure 1

6 pages, 2841 KiB  
Communication
The Superior Responsivity Enhancement of Thin-Film Ge Photodetectors by AuNP Coatings
by Juin Jie Liou, Hao-Tse Hsiao, I-Cheng Yao, Jia-Syun Jheng and Chu-Hsuan Lin
Coatings 2020, 10(8), 739; https://doi.org/10.3390/coatings10080739 - 29 Jul 2020
Viewed by 2089
Abstract
We have tried to improve the responsivity of germanium-based thin-film photodetectors. It has been shown that applying a mechanical strain to the detector led to a 46.6% enhancement on the 1550 nm detection. This improvement is better than the 1310 nm case, because [...] Read more.
We have tried to improve the responsivity of germanium-based thin-film photodetectors. It has been shown that applying a mechanical strain to the detector led to a 46.6% enhancement on the 1550 nm detection. This improvement is better than the 1310 nm case, because the bandgap shrinkage is more beneficial to the small-energy photon detection. The AuNP coating is even more attractive for responsivity enhancement of thin-film germanium (Ge) detectors. The responsivity enhancement due to the AuNP deposition is as high as 89% and 47%, for the 1310 nm and 1550 nm detections, respectively. To the best of our knowledge, this is the best responsivity enhancement for the thin-film Ge detectors reported to date. Full article
(This article belongs to the Special Issue Semiconductor Thin Films: Fabrication, Characterization and Applications)
►▼ Show Figures

Figure 1

9 pages, 5116 KiB  
Article
Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices
by Hsiao-Hsuan Hsu, Hsiu-Ming Liu and Sheng Lee
Coatings 2020, 10(8), 733; https://doi.org/10.3390/coatings10080733 - 26 Jul 2020
Cited by 4 | Viewed by 4013
Abstract
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leakage current caused by [...] Read more.
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leakage current caused by defect traps or grain boundaries within a gate stack would influence the stability of the ferroelectric domain switching. Furthermore, the ferroelectric domain switching and polarization current also depend on the ferroelectric capacitor area. We observe that a HfAlO ferroelectric capacitor can dominate the transfer characteristics of a p-type SnO thin-film transistor through the modulation of series capacitance in the gate stack based on a one-transistor one-capacitor series configuration. According to experimental results, the memory hysteresis window can be improved significantly with the area scaling due to the improvement of capacitance matching accuracy. Full article
(This article belongs to the Special Issue Semiconductor Thin Films: Fabrication, Characterization and Applications)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop