Silicon Nanowires and Their Applications
A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Nanotechnology and Applied Nanosciences".
Deadline for manuscript submissions: closed (30 June 2019) | Viewed by 52525
Special Issue Editors
Interests: semiconductor devices; electronic materials
Interests: bottom-up synthesis and properties of nanostructures; advanced nanowire device fabrication; nanowire sensors & electron devices; nanostructured semiconductor surfaces for photocatalytic applications
Special Issue Information
Dear Colleagues,
We invite you to contribute to a Special Issue of the journal Applied Sciences, "Silicon Nanowires and Their Applications", which aims to present recent advances in the investigation silicon nanowires (SiNWs) and SiNW-based devices including also fabrication strategies, SiNW characterization, and theoretical studies.
SiNWs provide a unique set of material and morphological properties comprising 1D transport phenomena and a high surface to volume ratio that enable a broad spectrum of applications. The enhanced electrostatics in SiNW devices offers for instance the possibility to scale field effect transistors (FETs) down to <10 nm following Moor's law. In addition, TFETs, which are based on band to band tunnelling and thus break the subthreshold slope limit of 60 mV/dec at 300 K in MOSFETs, can be significantly improved by utilizing wrapped gate SiNW configurations. Multiple applications were also demonstrated in the fields of chemical, biochemical and biological sensing ranging from ion-sensitive FETs and vertical electrode arrays to nanoscale injectable probes. SiNWs can be furthermore implemented in photonic and quantum computing devices. The compatibility with well-established CMOS microfabrication technologies supports here not only the overall device assembly but enables also possibilities of a simultaneous integration of photonics and electronics, or qubits and traditional control devices/circuits on the same platform. For thermo-electric applications, SiNWs promise significant enhancements in thermoelectric efficiency with low thermal conductivity. Furthermore, SiNWs show advantages in energy generation and storage: for example, to improve the properties of Lithium-ion battery anodes and solar cells. Other aspects and applications of SiNWs, besides the examples listed above, are also very welcome.
Prof. Qing-Tai Zhao
Prof. Steffen Strehle
Guest Editors
Manuscript Submission Information
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Keywords
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Si nanowire
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1D transport
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Electrostatics
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Field effect transistor
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Fabrication
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Quantum computing
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Sensor
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Thermo-electrics
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Battery
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Photovoltaics
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