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Appl. Sci. 2018, 8(6), 950; https://doi.org/10.3390/app8060950

Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors

1
Institute for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, Budapesterstr. 27, 01069 Dresden, Germany
2
Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany
3
NamLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany
4
Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Maria-Reiche-Str. 2, 01109 Dresden, Germany
*
Author to whom correspondence should be addressed.
Received: 27 April 2018 / Revised: 4 June 2018 / Accepted: 5 June 2018 / Published: 8 June 2018
(This article belongs to the Special Issue Silicon Nanowires and Their Applications)
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Abstract

We present a biosensor chip with integrated large area silicon nanowire-based field effect transistors (FET) for human α-thrombin detection and propose to implement the hysteresis width of the FET transfer curve as a reliable parameter to quantify the concentration of biomolecules in the solution. We further compare our results to conventional surface potential based measurements and demonstrate that both parameters distinctly respond at a different analyte concentration range. A combination of the two approaches would provide broader possibilities for detecting biomolecules that are present in a sample with highly variable concentrations, or distinct biomolecules that can be found at very different levels. Finally, we qualitatively discuss the physical and chemical origin of the hysteresis signal and associate it with the polarization of thrombin molecules upon binding to the receptor at the nanowire surface. View Full-Text
Keywords: silicon nanowires; field effect transistor; nanosensors; sub-threshold regime; transfer characteristics; hysteresis; aptamers; human α-thrombin silicon nanowires; field effect transistor; nanosensors; sub-threshold regime; transfer characteristics; hysteresis; aptamers; human α-thrombin
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Ibarlucea, B.; Römhildt, L.; Zörgiebel, F.; Pregl, S.; Vahdatzadeh, M.; Weber, W.M.; Mikolajick, T.; Opitz, J.; Baraban, L.; Cuniberti, G. Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors. Appl. Sci. 2018, 8, 950.

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