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Open AccessFeature PaperArticle

Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

1
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), 01328 Dresden, Germany
2
International Helmholtz Research School for Nanoelectronic Network, HZDR, 01328 Dresden, Germany
3
Center for Advancing Electronics Dresden, Dresden University of Technology, 01062 Dresden, Germany
4
Institute of Physics, Chemnitz University of Technology, 09126 Chemitz, Germany
5
Fraunhofer Institute for Electronic Nano Systems, 09126 Chemnitz, Germany
6
Dresden Center for Nano-Analysis, Dresden University of Technology, 01062 Dresden, Germany
7
Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Dresden, 01277 Dresden, Germany
8
Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany
9
Dresden Center for Computational Materials Science, Dresden University of Technology, 01062 Dresden, Germany
10
On leave of absence from the Institute of Electronics at Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd., 1784 Sofia, Bulgaria
*
Authors to whom correspondence should be addressed.
Appl. Sci. 2019, 9(17), 3462; https://doi.org/10.3390/app9173462
Received: 30 June 2019 / Revised: 13 August 2019 / Accepted: 14 August 2019 / Published: 22 August 2019
(This article belongs to the Special Issue Silicon Nanowires and Their Applications)
We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal annealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled plasma etching. The effects of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process are studied. Scanning electron microscopy and transmission electron microscopy are performed to study Ni diffusion, silicide phases, and silicide–silicon interfaces. Control over the silicide phase is achieved together with atomically sharp silicide–silicon interfaces. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge. View Full-Text
Keywords: Schottky junction; field-effect transistors; nickel silicide; annealing Schottky junction; field-effect transistors; nickel silicide; annealing
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MDPI and ACS Style

Khan, M.B.; Deb, D.; Kerbusch, J.; Fuchs, F.; Löffler, M.; Banerjee, S.; Mühle, U.; Weber, W.M.; Gemming, S.; Schuster, J.; Erbe, A.; Georgiev, Y.M. Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires. Appl. Sci. 2019, 9, 3462. https://doi.org/10.3390/app9173462

AMA Style

Khan MB, Deb D, Kerbusch J, Fuchs F, Löffler M, Banerjee S, Mühle U, Weber WM, Gemming S, Schuster J, Erbe A, Georgiev YM. Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires. Applied Sciences. 2019; 9(17):3462. https://doi.org/10.3390/app9173462

Chicago/Turabian Style

Khan, Muhammad B.; Deb, Dipjyoti; Kerbusch, Jochen; Fuchs, Florian; Löffler, Markus; Banerjee, Sayanti; Mühle, Uwe; Weber, Walter M.; Gemming, Sibylle; Schuster, Jörg; Erbe, Artur; Georgiev, Yordan M. 2019. "Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires" Appl. Sci. 9, no. 17: 3462. https://doi.org/10.3390/app9173462

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