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Appl. Sci. 2018, 8(9), 1553; https://doi.org/10.3390/app8091553

High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China
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Received: 30 June 2018 / Revised: 28 August 2018 / Accepted: 31 August 2018 / Published: 4 September 2018
(This article belongs to the Special Issue Silicon Nanowires and Their Applications)
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Abstract

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section. View Full-Text
Keywords: silicon nanowire; triangular cross section; simulation; experiment; TMAH; low temperature; mobility silicon nanowire; triangular cross section; simulation; experiment; TMAH; low temperature; mobility
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Li, M.; Chen, G.; Huang, R. High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments. Appl. Sci. 2018, 8, 1553.

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