Chalcopyrite-based thin-film solar cells have great potential for various applications, such as top or bottom cells in tandem devices, in addition to their use as standard single-junction modules due to their tuneable bandgap energy. A bandgap energy
Eg > 1.5 eV should be targeted to realize a wide-bandgap top cell, e.g., by increasing the [Ga]/([Ga] + [In]) (GGI) ratio in Cu(In,Ga)Se
2 (CIGS) cells to the range of 0.7–1. A second approach is targeting the second theoretical efficiency maximum at a little lower
Eg = 1.34 eV with a GGI around 0.6 for high-efficiency single-junction applications with reduced electrical losses. An industry-relevant (Ag,Cu)(In,Ga)Se
2 (ACIGS) co-evaporation process for wide-bandgap cells fabricated with GGI ratios above 0.6, with moderate [Ag]/([Ag] + [Cu]) (AAC) ratios < 0.1 and in-line RbF-PDT, was established on molybdenum-coated soda-lime glass substrates. Both measures, Ag alloying and RbF-PDT, can increase power conversion efficiency (PCE) mainly due to improved open-circuit voltage (
VOC). In addition, Ag addition can increase fill factor (FF)
, leading to an increase in the PCE for cells with GGI > 0.6 compared to Ag-free reference cells. (Zn,Mg)O, either with a [Mg]/([Mg] + [Zn]) ratio of 0.15 or 0.25, is a good option as high-resistive layer replacing the commonly used i-ZnO in combination with a CdS buffer. Our best ACIGS wide-bandgap solar cells with RbF-PDT and Zn
0.85Mg
0.15O (without anti-reflective coating (ARC)) from various experimental campaigns show a PCE of 12.7% (
Eg = 1.50 eV), and with a slightly reduced
Eg of 1.45 eV a PCE of 15.5%, with
VOC of 933 mV (
VOC deficit of 517 mV), and a good FF of 73.2%. In the case when the bandgap is significantly lowered to 1.34 eV (GGI = 0.61), to the second theoretical efficiency maximum, we achieved a PCE of 18.2% with ARC for an Ag-free CIGS cell with RbF-PDT. For this cell with a CdS/i-ZnO buffer system the
VOC deficit is 480 mV, and the FF is 78.1%.
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