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Electronic Materials, Volume 5, Issue 1

March 2024 - 3 articles

Cover Story: Advancing memory technology is crucial as digitalization and computing demand surge. ReRAM crossbar arrays integrated with IMT selectors represent a significant leap in non-volatile memory, offering high-density storage and lower power consumption. IMT selectors are excellent in managing data flow and mitigating sneak path currents, elevating ReRAM's reliability and efficiency. The steep I-V characteristics of IMT materials mean that small changes in voltage can lead to large changes in current, requiring models that can precisely capture this behavior. Additionally, the nonlinearity of IMT materials introduces complexity in simulating their response under various operating conditions. The focus on creating effective compact models for IMT selectors represents a significant stride toward improving and innovating future memory solutions. View this paper
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Articles (3)

  • Article
  • Open Access
2 Citations
2,154 Views
15 Pages

Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing

  • Gayan K. L. Sankalpa,
  • Gayan R. K. K. G. R. Kumarasinghe,
  • Buddhika S. Dassanayake and
  • Gayan W. C. Kumarage

The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bat...

  • Article
  • Open Access
5 Citations
4,182 Views
13 Pages

This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM)...

  • Article
  • Open Access
1 Citations
1,909 Views
16 Pages

In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperat...

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Electron. Mater. - ISSN 2673-3978