Bastuck, M.; Puglisi, D.; Spetz, A.L.; Schütze, A.; Sauerwald, T.; Andersson, M.
UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings 2018, 2, 999.
https://doi.org/10.3390/proceedings2130999
AMA Style
Bastuck M, Puglisi D, Spetz AL, Schütze A, Sauerwald T, Andersson M.
UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings. 2018; 2(13):999.
https://doi.org/10.3390/proceedings2130999
Chicago/Turabian Style
Bastuck, Manuel, Donatella Puglisi, Anita Lloyd Spetz, Andreas Schütze, Tilman Sauerwald, and Mike Andersson.
2018. "UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors" Proceedings 2, no. 13: 999.
https://doi.org/10.3390/proceedings2130999
APA Style
Bastuck, M., Puglisi, D., Spetz, A. L., Schütze, A., Sauerwald, T., & Andersson, M.
(2018). UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings, 2(13), 999.
https://doi.org/10.3390/proceedings2130999