Bastuck, M.;                     Puglisi, D.;                     Spetz, A.L.;                     Schütze, A.;                     Sauerwald, T.;                     Andersson, M.    
        UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings 2018, 2, 999.
    https://doi.org/10.3390/proceedings2130999
    AMA Style
    
                                Bastuck M,                                 Puglisi D,                                 Spetz AL,                                 Schütze A,                                 Sauerwald T,                                 Andersson M.        
                UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings. 2018; 2(13):999.
        https://doi.org/10.3390/proceedings2130999
    
    Chicago/Turabian Style
    
                                Bastuck, Manuel,                                 Donatella Puglisi,                                 Anita Lloyd Spetz,                                 Andreas Schütze,                                 Tilman Sauerwald,                                 and Mike Andersson.        
                2018. "UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors" Proceedings 2, no. 13: 999.
        https://doi.org/10.3390/proceedings2130999
    
    APA Style
    
                                Bastuck, M.,                                 Puglisi, D.,                                 Spetz, A. L.,                                 Schütze, A.,                                 Sauerwald, T.,                                 & Andersson, M.        
        
        (2018). UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors. Proceedings, 2(13), 999.
        https://doi.org/10.3390/proceedings2130999