Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure†
AbstractPd–anodic oxide–InP metal–oxide–semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. Through palladium amount varying the signal recovery time has been improved (became shorter). Decrease of photovoltage and strong increase of photocurrent were observed for illuminated by LED structures under hydrogen pulse exposure. The gas testing was carried out in 0.1–10% hydrogen in nitrogen, and in 100% hydrogen. As a result, low power-consumption hydrogen sensor with a fast response-recovery time 1/20 s. was developed.
Share & Cite This Article
Shutaev, V.; Imenkov, A.; Grebenshchikova, E.; Sidorov, V.; Virko, D.; Makarov, S.; Yakovlev, Y. Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure. Proceedings 2017, 1, 369.
Shutaev V, Imenkov A, Grebenshchikova E, Sidorov V, Virko D, Makarov S, Yakovlev Y. Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure. Proceedings. 2017; 1(4):369.Chicago/Turabian Style
Shutaev, Vadim; Imenkov, Albert; Grebenshchikova, Elena; Sidorov, Valeri; Virko, Denis; Makarov, Semen; Yakovlev, Yuri. 2017. "Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure." Proceedings 1, no. 4: 369.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.