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Open AccessArticle

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

1
Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju 38180, Korea
2
School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea
*
Author to whom correspondence should be addressed.
Electronics 2020, 9(12), 2134; https://doi.org/10.3390/electronics9122134
Received: 19 November 2020 / Revised: 11 December 2020 / Accepted: 11 December 2020 / Published: 13 December 2020
(This article belongs to the Special Issue New CMOS Devices and Their Applications)
This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications. The proposed 1T-DRAM achieves the sensing margin using the difference in hole density in the body region between ‘1’ and ‘0’ states. The Si/SiGe heterostructure forms a quantum well in the body and reduces the band-to-band tunneling (BTBT) barrier between the body and drain. Compared with the performances of the 1T-DRAM with Si homo-structure, the proposed 1T-DRAM improves the sensing margin and retention time because its storage ability is enhanced by the quantum well. In addition, the thin BTBT barrier reduced the bias condition for the program operation. The proposed 1T-DRAM showed a high potential for memory applications by obtaining a high read current ratio at ‘1’ and ‘0’ states about 108 and a long retention time above 10 ms. View Full-Text
Keywords: junction-less field-effect transistor; gate-all-around; one-transistor dynamic random-access memory; Si/SiGe heterostructure junction-less field-effect transistor; gate-all-around; one-transistor dynamic random-access memory; Si/SiGe heterostructure
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MDPI and ACS Style

Yoon, Y.J.; Lee, J.S.; Kim, D.-S.; Lee, S.H.; Kang, I.M. One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure. Electronics 2020, 9, 2134. https://doi.org/10.3390/electronics9122134

AMA Style

Yoon YJ, Lee JS, Kim D-S, Lee SH, Kang IM. One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure. Electronics. 2020; 9(12):2134. https://doi.org/10.3390/electronics9122134

Chicago/Turabian Style

Yoon, Young J.; Lee, Jae S.; Kim, Dong-Seok; Lee, Sang H.; Kang, In M. 2020. "One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure" Electronics 9, no. 12: 2134. https://doi.org/10.3390/electronics9122134

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