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Journal: Electronics, 2020
Volume: 9
Number: 2134
Article:
One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure
Authors:
by
Young Jun Yoon, Jae Sang Lee, Dong-Seok Kim, Sang Ho Lee and In Man Kang
Link:
https://www.mdpi.com/2079-9292/9/12/2134
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