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Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices

Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
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Electronics 2020, 9(1), 4; https://doi.org/10.3390/electronics9010004
Received: 15 November 2019 / Revised: 6 December 2019 / Accepted: 17 December 2019 / Published: 18 December 2019
The bias-dependent signal transmission of flexible synaptic transistors is investigated. The novel neuromorphic devices are fabricated on a thin and transparent plastic sheet, incorporating a high-performance organic semiconductor, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, into the active channel. Upon spike emulation at different synaptic voltages, the short-term plasticity feature of the devices is substantially modulated. By adopting an iterative model for the synaptic output currents, key physical parameters associated with the charge carrier dynamics are estimated. The correlative extraction approach is found to yield the close fits to the experimental results, and the systematic evolution of the timing constants is rationalized. View Full-Text
Keywords: flexible electronics; neuromorphic engineering; organic field-effect transistors; synaptic devices; short-term plasticity flexible electronics; neuromorphic engineering; organic field-effect transistors; synaptic devices; short-term plasticity
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MDPI and ACS Style

Lee, S.; Kim, C.-H. Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices. Electronics 2020, 9, 4. https://doi.org/10.3390/electronics9010004

AMA Style

Lee S, Kim C-H. Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices. Electronics. 2020; 9(1):4. https://doi.org/10.3390/electronics9010004

Chicago/Turabian Style

Lee, Seunghyuk; Kim, Chang-Hyun. 2020. "Analysis of the Voltage-Dependent Plasticity in Organic Neuromorphic Devices" Electronics 9, no. 1: 4. https://doi.org/10.3390/electronics9010004

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