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Review

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Academic Editor: Mohan Jacob
Electronics 2015, 4(3), 424-479; https://doi.org/10.3390/electronics4030424
Received: 6 June 2015 / Revised: 10 July 2015 / Accepted: 14 July 2015 / Published: 23 July 2015
(This article belongs to the Special Issue Flexible Electronics)
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided. View Full-Text
Keywords: flexible electronics; silicon; nonvolatile memory; ferroelectric; memristor; resistive; flash; phase change memory; random access memory (RAM); transistor; CMOS; inorganic; reliability flexible electronics; silicon; nonvolatile memory; ferroelectric; memristor; resistive; flash; phase change memory; random access memory (RAM); transistor; CMOS; inorganic; reliability
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MDPI and ACS Style

Ghoneim, M.T.; Hussain, M.M. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics. Electronics 2015, 4, 424-479. https://doi.org/10.3390/electronics4030424

AMA Style

Ghoneim MT, Hussain MM. Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics. Electronics. 2015; 4(3):424-479. https://doi.org/10.3390/electronics4030424

Chicago/Turabian Style

Ghoneim, Mohamed T., and Muhammad M. Hussain 2015. "Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics" Electronics 4, no. 3: 424-479. https://doi.org/10.3390/electronics4030424

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