Shin, K.; Kim, D.; Kim, M.; Park, J.; Han, C.
Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications. Electronics 2025, 14, 163.
https://doi.org/10.3390/electronics14010163
AMA Style
Shin K, Kim D, Kim M, Park J, Han C.
Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications. Electronics. 2025; 14(1):163.
https://doi.org/10.3390/electronics14010163
Chicago/Turabian Style
Shin, Kanghee, Dongkyun Kim, Minu Kim, Junho Park, and Changho Han.
2025. "Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications" Electronics 14, no. 1: 163.
https://doi.org/10.3390/electronics14010163
APA Style
Shin, K., Kim, D., Kim, M., Park, J., & Han, C.
(2025). Enhanced Short-Circuit Robustness of 1.2 kV Split Gate Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors for High-Frequency Applications. Electronics, 14(1), 163.
https://doi.org/10.3390/electronics14010163