Wang, F.; Fang, M.; Yu, P.; Zhou, W.; Cao, K.; Xie, Z.; Liu, X.; Yan, F.; Ji, X.
Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology. Electronics 2024, 13, 2391.
https://doi.org/10.3390/electronics13122391
AMA Style
Wang F, Fang M, Yu P, Zhou W, Cao K, Xie Z, Liu X, Yan F, Ji X.
Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology. Electronics. 2024; 13(12):2391.
https://doi.org/10.3390/electronics13122391
Chicago/Turabian Style
Wang, Fan, Minghai Fang, Peng Yu, Wenbin Zhou, Kaiwei Cao, Zhen Xie, Xiangze Liu, Feng Yan, and Xiaoli Ji.
2024. "Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology" Electronics 13, no. 12: 2391.
https://doi.org/10.3390/electronics13122391
APA Style
Wang, F., Fang, M., Yu, P., Zhou, W., Cao, K., Xie, Z., Liu, X., Yan, F., & Ji, X.
(2024). Effects of Fe Contamination on the Reliability of Gate Oxide Integrity in Advanced CMOS Technology. Electronics, 13(12), 2391.
https://doi.org/10.3390/electronics13122391
