A Microdevice in a Submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS)
Abstract
:1. Introduction
2. Design
2.1. Low-Noise Amplifier (LNA)
2.2. Neurostimulator
3. Experimental Results
3.1. Low-Noise Amplifier (LNA)
3.2. Neurostimulator Circuit
4. Discussion
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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MOSFET | (W/L) |
M1, M2 | 59 μm/0.52 μm |
M3, M4 | 25 μm/14.9 μm |
M5 | 48 μm/2.22 μm |
M6 | 12.5 μm/14.9 μm |
M7 | 12 μm/2.22 μm |
M8n | 1.55 μm/12 μm |
M8p | 3.1 μm/12 μm |
M9 | 2 μm/2.22 μm |
Mp1, Mp2 | 12 μm/0.6 μm |
Capacitor | Total Value |
Cc | 7.5 pF |
C1 | 18.7 pF |
C2 | 0.18 pF |
MOSFET | (W/L) |
M1, M2 | 14.8 µm/0.24 µm |
M3, M4 | 4.68 µm/0.18 µm |
M5 | 14.4 µm/0.36 µm |
M6 | 18.72 µm/0.18 µm |
M7 | 28.8 µm/0.36 µm |
M8 | 0.51 µm/7.2 µm |
M9 | 0.80 µm/0.36 µm |
Capacitor | Total Value |
Cc | 2.5 pF |
Cx | 417.2 fF |
Resistor | Total Value |
R1, R2 | ≈3.52 kΩ |
R3, R4 | ≈24.61 kΩ |
Vin (mVpp) | VCM (V) | VCM,out (V) | Gmax (dB) | fL (Hz) | fH (kHz) |
---|---|---|---|---|---|
2 | 0.5 | 0.506 | 41.1 | 6.1 | 13 |
0.6 | 0.63 | 41.2 | 1.5 | 11.5 | |
0.7 | 1.08 | 40.2 | 1.3 | 8 |
Ref. | CMOS Process | Mid-Band Gain (dB) | Bandwidth (Hz) | Power Supply (V) | Power Consumption (μW) | Area (mm2) | IRN (μVrms) | NEF |
---|---|---|---|---|---|---|---|---|
This work | 65 nm | 42 | 1.5–200 200–11.5 k 1.5–11.5 k | 1.2 | 5.88 | 0.046 | 6.48 3.45 7.36 | – 2.63 5.57 |
[21] | 40 nm | 25.7 | 200–5.0 k | 1.2 | 2.8 | N/A | 5.3 | 4.40 |
[22] | 65 nm | 52.1 | 1.0–8.2 k | 1.0 | 2.8 | 0.042 | 4.13 | 2.93 |
[23] | 65 nm | 46 | 1.0–10 k | 0.5 | 1.5 | 0.0039 | 6.5 | 4.34 |
[26] | 65 nm | 30 | 300–10 k | 0.5 | 2.3 | 0.025 | 5.8 | 4.76 |
[9] | 90 nm | 58.7 | 0.49–10.5 k | 1.0 | 2.85 | 0.137 | 3.04 | 1.93 |
[27] | 0.13 μm | 40 | 0.05–0.5 k | 1.0 | 12.1 | 0.072 | 2.2 | 2.90 |
[28] | 0.18 μm | 40 | 0.1–7.4 k | 1.0 | 3.44 | 0.012 | 4.27 | 3.07 |
[29] | 0.18 μm | 40 | 0.05–7.5 k | 1.2 | 4.8 | 0.022 | 3.87 | 3.44 |
[30] | 0.5 μm | 49.26, 60.63 | 0.5–300 270–12.9 k | 3.3 | 4.12 | 0.0144 | 3.16 | 2.53 |
[31] | 0.5 μm | 36.1 | 0.3–4.7 k | 1.0 | 0.805 | 0.046 | 3.6 | 1.8 |
[10] | 0.5 μm | 39.5 | 0.025–7.2 k | ±2.5 | 80 | 0.16 | 2.2 | 4.0 |
Ref. | Current (μA) | Voltage (V) | Maximum Pulse Frequency/ Bandwidth (Hz) | Minimum Pulse Duration/ Bandwidth−1 (μs) | Charge Balance | Active Charge Balancing Method |
---|---|---|---|---|---|---|
This work | from −325 to +318 | 1.2 | 1.5 × 106 (BW) | 25 | Active | Continuous (Howland current pump) |
[33] | from 20 to 2000 | 12 | 500 | 10 | Active | Switched (H-bridge) |
[34] | from −200 to +200 | 3.6 (bat) | 185 | 90 | Active | Switched |
[35] | from 0 to 200 | 3.2 (bat) | 130 | 90 | Passive | Switched |
[36] | from 30 to 1000 | 3.7 (bat) | 5000 | 10 | Active | Switched |
[37] | from −375 to +250 | 10 | 5000 | 20 | Active | Continuous (Howland current pump) |
[38] | from 20 to 2000 | 4.8 (bat) | 300 | 40 | Active | Switched (H-bridge) |
[39] | from 10 to 500 | 3.1 (bat) | 200 | 60 | Passive | Switched |
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Nordi, T.M.; Gounella, R.; Amorim, M.L.M.; Luppe, M.; Junior, J.N.S.; Afonso, J.L.; Monteiro, V.; Afonso, J.A.; Talamoni Fonoff, E.; Colombari, E.; et al. A Microdevice in a Submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS). J. Low Power Electron. Appl. 2024, 14, 28. https://doi.org/10.3390/jlpea14020028
Nordi TM, Gounella R, Amorim MLM, Luppe M, Junior JNS, Afonso JL, Monteiro V, Afonso JA, Talamoni Fonoff E, Colombari E, et al. A Microdevice in a Submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS). Journal of Low Power Electronics and Applications. 2024; 14(2):28. https://doi.org/10.3390/jlpea14020028
Chicago/Turabian StyleNordi, Tiago Matheus, Rodrigo Gounella, Marcio L. M. Amorim, Maximiliam Luppe, João Navarro Soares Junior, Joao L. Afonso, Vitor Monteiro, Jose A. Afonso, Erich Talamoni Fonoff, Eduardo Colombari, and et al. 2024. "A Microdevice in a Submicron CMOS for Closed-Loop Deep-Brain Stimulation (CLDBS)" Journal of Low Power Electronics and Applications 14, no. 2: 28. https://doi.org/10.3390/jlpea14020028