Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423

Zhaoxu Song; Shichun Wang; Yujie Han; Gongyi Huang; Chuanzhong Xu

doi:10.3390/coatings15030328

,

and

College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China

^*

Author to whom correspondence should be addressed.

Coatings2025, 15(3), 328;https://doi.org/10.3390/coatings15030328

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There was an error in the original publication [1]. An error was made in Equation (16), where a variable (C_ox) was not included. The correct equation is given below:

I_{d s} = μ_{e f f} C_{o x} \frac{W}{L} {\{[(V_{g s} - V_{f b}) + \frac{Q_{T} + Q_{D}}{C_{o x}}] φ_{s} - \frac{1}{2} {φ_{s}}^{2} + V_{T} Q_{i} (φ_{s})\}}_{φ s s}^{φ s d}

(16)

The authors state that the scientific conclusions are unaffected. This correction was approved by the Academic Editor. The original publication has also been updated.

Reference

Song, Z.; Wang, S.; Han, Y.; Huang, G.; Xu, C. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. [Google Scholar] [CrossRef]

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© 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423

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