Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423

There was an error in the original publication [1]. An error was made in Equation (16), where a variable (C_ox) was not included. The correct equation is given below:

$$I_{ds}={\mu }_{eff}{C}_{ox}{\displaystyle \frac{W}{L}}{\left\{\left[\left(V_{gs}-V_{fb}\right)+{\displaystyle \frac{Q_T+Q_D}{C_{ox}}}\right]{\phi }_s-{\displaystyle \frac{1}{2}}{{\phi }_s}^2+V_T{Q}_i\left({\phi }_s\right)\right\}}_{\phi ss}^{\phi sd}$$

(16)

The authors state that the scientific conclusions are unaffected. This correction was approved by the Academic Editor. The original publication has also been updated.