Song, Z.; Wang, S.; Han, Y.; Huang, G.; Xu, C.
Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings 2025, 15, 328.
https://doi.org/10.3390/coatings15030328
AMA Style
Song Z, Wang S, Han Y, Huang G, Xu C.
Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings. 2025; 15(3):328.
https://doi.org/10.3390/coatings15030328
Chicago/Turabian Style
Song, Zhaoxu, Shichun Wang, Yujie Han, Gongyi Huang, and Chuanzhong Xu.
2025. "Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423" Coatings 15, no. 3: 328.
https://doi.org/10.3390/coatings15030328
APA Style
Song, Z., Wang, S., Han, Y., Huang, G., & Xu, C.
(2025). Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings, 15(3), 328.
https://doi.org/10.3390/coatings15030328