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Open AccessArticle

Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots

1
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Space Optics Department, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 423; https://doi.org/10.3390/nano9030423
Received: 31 January 2019 / Revised: 20 February 2019 / Accepted: 2 March 2019 / Published: 12 March 2019
(This article belongs to the Special Issue Applications of Quantum Dots)
The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system. Most importantly, it is possible to realize enhanced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption by choosing suitable parameters for the multiple quantum dots. These results have many potential applications in nonlinear optics and quantum information devices using semiconductor quantum dots. View Full-Text
Keywords: quantum dots; self-Kerr nonlinearity; fifth-order nonlinearity; cross-Kerr nonlinearity quantum dots; self-Kerr nonlinearity; fifth-order nonlinearity; cross-Kerr nonlinearity
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MDPI and ACS Style

Tian, S.-C.; Lu, H.-Y.; Zhang, H.; Wang, L.-J.; Shu, S.-L.; Zhang, X.; Hou, G.-Y.; Wang, Z.-Y.; Tong, C.-Z.; Wang, L.-J. Enhancing Third- and Fifth-Order Nonlinearity via Tunneling in Multiple Quantum Dots. Nanomaterials 2019, 9, 423.

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