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Nanomaterials 2019, 9(3), 365; https://doi.org/10.3390/nano9030365

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

1
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
2
Center for Photonics and Semiconductors, Hubei Key Laboratory of Waterjet Theory and New Technology, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
3
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
*
Author to whom correspondence should be addressed.
Received: 31 January 2019 / Revised: 1 March 2019 / Accepted: 4 March 2019 / Published: 5 March 2019
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Abstract

We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11–20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1–100] direction. View Full-Text
Keywords: GaN-based UV LED; wet chemical etching; prism-structured sidewall; crystal orientation; light extraction GaN-based UV LED; wet chemical etching; prism-structured sidewall; crystal orientation; light extraction
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Wan, H.; Tang, B.; Li, N.; Zhou, S.; Gui, C.; Liu, S. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes. Nanomaterials 2019, 9, 365.

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