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Nanomaterials 2018, 8(7), 515; https://doi.org/10.3390/nano8070515

Synthesis and Surface-Enhanced Raman Scattering of Ultrathin SnSe2 Nanoflakes by Chemical Vapor Deposition

1
School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
2
Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, China
*
Author to whom correspondence should be addressed.
Received: 7 June 2018 / Revised: 2 July 2018 / Accepted: 6 July 2018 / Published: 10 July 2018
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Abstract

As a new atomically layered, two-dimensional material, tin (IV) diselenide (SnSe2) has attracted extensive attention due to its compelling application in electronics and optoelectronics. However, the great challenge of impurities and the preparation of high-quality ultrathin SnSe2 nanoflakes has hindered far-reaching research and SnSe2 practical applications so far. Therefore, a facile chemical vapor deposition (CVD) method is employed to synthesize large-scale ultrathin SnSe2 flakes on mica substrates using SnSe and Se powder as precursors. The structural characteristics and crystalline quality of the product were investigated. Moreover, Raman characterizations indicate that the intensity of A1g peak and Eg peak, and the Raman shift of Eg are associated with the thickness of the SnSe2 nanoflakes. The ultrathin SnSe2 nanoflakes show a strong surface-enhanced Raman spectroscopy (SERS) activity for Rhodamine 6G (R6G) molecules. Theoretical explanations for the enhancement principle based on the chemical enhancement mechanism and charge transfer diagram between R6G and SnSe2 are provided. The results demonstrate that the ultrathin SnSe2 flakes are high-quality single crystal and can be exploited for microanalysis detection and optoelectronic application. View Full-Text
Keywords: SnSe2; CVD; ultrathin; SERS SnSe2; CVD; ultrathin; SERS
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Zhang, Y.; Shi, Y.; Wu, M.; Zhang, K.; Man, B.; Liu, M. Synthesis and Surface-Enhanced Raman Scattering of Ultrathin SnSe2 Nanoflakes by Chemical Vapor Deposition. Nanomaterials 2018, 8, 515.

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