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Article

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

1
Centre de Nanosciences et de Nanotechnologies—CNRS-UMR9001, Université Paris-Sud, Université Paris-Saclay, F91120 Palaiseau, France
2
Laboratoire de Génie Électrique et Électronique de Paris, UMR 8507 CNRS-Centrale-Supélec, Université Paris-Sud, Université Paris-Saclay et UPMC-Sorbonne Université, F91190 Gif-sur-Yvette, France
*
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(6), 367; https://doi.org/10.3390/nano8060367
Received: 29 April 2018 / Revised: 18 May 2018 / Accepted: 23 May 2018 / Published: 25 May 2018
(This article belongs to the Special Issue 1D Nanostructure-Based Piezo-Generators)
We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm2. These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources. View Full-Text
Keywords: III-N nanowires; piezoelectric generation; atomic force microscope; piezo-generators; energy harvesting III-N nanowires; piezoelectric generation; atomic force microscope; piezo-generators; energy harvesting
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MDPI and ACS Style

Jegenyes, N.; Morassi, M.; Chrétien, P.; Travers, L.; Lu, L.; Julien, F.H.; Tchernycheva, M.; Houzé, F.; Gogneau, N. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. Nanomaterials 2018, 8, 367. https://doi.org/10.3390/nano8060367

AMA Style

Jegenyes N, Morassi M, Chrétien P, Travers L, Lu L, Julien FH, Tchernycheva M, Houzé F, Gogneau N. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. Nanomaterials. 2018; 8(6):367. https://doi.org/10.3390/nano8060367

Chicago/Turabian Style

Jegenyes, Nikoletta, Martina Morassi, Pascal Chrétien, Laurent Travers, Lu Lu, Francois H. Julien, Maria Tchernycheva, Frédéric Houzé, and Noelle Gogneau. 2018. "High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires" Nanomaterials 8, no. 6: 367. https://doi.org/10.3390/nano8060367

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