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High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

Centre de Nanosciences et de Nanotechnologies—CNRS-UMR9001, Université Paris-Sud, Université Paris-Saclay, F91120 Palaiseau, France
Laboratoire de Génie Électrique et Électronique de Paris, UMR 8507 CNRS-Centrale-Supélec, Université Paris-Sud, Université Paris-Saclay et UPMC-Sorbonne Université, F91190 Gif-sur-Yvette, France
Author to whom correspondence should be addressed.
Nanomaterials 2018, 8(6), 367;
Received: 29 April 2018 / Revised: 18 May 2018 / Accepted: 23 May 2018 / Published: 25 May 2018
(This article belongs to the Special Issue 1D Nanostructure-Based Piezo-Generators)
We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm2. These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources. View Full-Text
Keywords: III-N nanowires; piezoelectric generation; atomic force microscope; piezo-generators; energy harvesting III-N nanowires; piezoelectric generation; atomic force microscope; piezo-generators; energy harvesting
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MDPI and ACS Style

Jegenyes, N.; Morassi, M.; Chrétien, P.; Travers, L.; Lu, L.; Julien, F.H.; Tchernycheva, M.; Houzé, F.; Gogneau, N. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. Nanomaterials 2018, 8, 367.

AMA Style

Jegenyes N, Morassi M, Chrétien P, Travers L, Lu L, Julien FH, Tchernycheva M, Houzé F, Gogneau N. High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires. Nanomaterials. 2018; 8(6):367.

Chicago/Turabian Style

Jegenyes, Nikoletta, Martina Morassi, Pascal Chrétien, Laurent Travers, Lu Lu, Francois H. Julien, Maria Tchernycheva, Frédéric Houzé, and Noelle Gogneau. 2018. "High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires" Nanomaterials 8, no. 6: 367.

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