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The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

1
Department of Chemistry, Haiyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
3
Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey
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Department of Basic Sciences, Faculty of Sciences, Erzurum Technical University, 25050 Erzurum, Turkey
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National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
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Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genoa, Italy
8
Department of Physics, University of Calabria, via ponte Bucci, cubo 31/C, 87036 Rende, Italy
*
Authors to whom correspondence should be addressed.
Nanomaterials 2017, 7(11), 372; https://doi.org/10.3390/nano7110372
Received: 17 October 2017 / Accepted: 28 October 2017 / Published: 5 November 2017
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Abstract

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed. View Full-Text
Keywords: indium selenide; exfoliation; Bridgman-Stockbarger growth; chemical reactivity; angle-resolved photoemission spectroscopy; nanodevices indium selenide; exfoliation; Bridgman-Stockbarger growth; chemical reactivity; angle-resolved photoemission spectroscopy; nanodevices
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Boukhvalov, D.W.; Gürbulak, B.; Duman, S.; Wang, L.; Politano, A.; Caputi, L.S.; Chiarello, G.; Cupolillo, A. The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications. Nanomaterials 2017, 7, 372.

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