Next Article in Journal
On the Near-Pole Hole Insertion Layer and the Far-Pole Hole Insertion Layer for Multi-Quantum-Well Deep Ultraviolet Light-Emitting Diodes
Next Article in Special Issue
A New Strategy to Fabricate Nanoporous Gold and Its Application in Photodetector
Previous Article in Journal
Facile Cellulase Immobilisation on Bioinspired Silica
Previous Article in Special Issue
Microwave-Assisted Vacuum Synthesis of TiO2 Nanocrystalline Powders in One-Pot, One-Step Procedure
Article

Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing

Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Jose V. Ros-Lis
Nanomaterials 2022, 12(4), 628; https://doi.org/10.3390/nano12040628
Received: 14 January 2022 / Revised: 3 February 2022 / Accepted: 10 February 2022 / Published: 13 February 2022
(This article belongs to the Special Issue The Application of Microwave-Assisted Technology in Nanomaterials)
In this study, the efficient fabrication of nickel silicide (NiSix) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. To validate the efficacy of the NiSix formation process by MWA, NiSix is also prepared via the conventional rapid thermal annealing (RTA) process. The Rs of the MWA NiSix decreases with increasing microwave power, and becomes saturated at 600 W, thus showing lower resistance than the 500 °C RTA NiSix. Further, SB-diodes formed on n-type and p-type bulk silicon are found to have optimal rectification characteristics at 600 W microwave power, and exhibit superior characteristics to the RTA SB-diodes. Evaluation of the electrical properties of NiSix SB-TFTs on excimer-laser-annealed (ELA) poly-Si substrates indicates that the MWA NiSix junction exhibits better ambipolar operation and transistor performance, along with improved stability. Furthermore, CMOS inverters, constructed using the ambipolar SB-TFTs, exhibit better voltage transfer characteristics, voltage gains, and dynamic inverting behavior by incorporating the MWA NiSix source-and-drain (S/D) junctions. Therefore, MWA is an effective process for silicide formation, and ambipolar SB-TFTs using MWA NiSix junctions provide a promising future for CMOS technology. View Full-Text
Keywords: thin-film transistors; microwave annealing; rapid thermal annealing; ambipolar conduction characteristics; silicide; Schottky junctions thin-film transistors; microwave annealing; rapid thermal annealing; ambipolar conduction characteristics; silicide; Schottky junctions
Show Figures

Figure 1

MDPI and ACS Style

Min, J.-G.; Lee, D.-H.; Kim, Y.-U.; Cho, W.-J. Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing. Nanomaterials 2022, 12, 628. https://doi.org/10.3390/nano12040628

AMA Style

Min J-G, Lee D-H, Kim Y-U, Cho W-J. Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing. Nanomaterials. 2022; 12(4):628. https://doi.org/10.3390/nano12040628

Chicago/Turabian Style

Min, Jin-Gi, Dong-Hee Lee, Yeong-Ung Kim, and Won-Ju Cho. 2022. "Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing" Nanomaterials 12, no. 4: 628. https://doi.org/10.3390/nano12040628

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop