Search Results (160)

In this study, Hf_0.5Zr_0.5O₂ (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2P_r = 61.0 μC/cm²). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2P_r values of approximately 50.4 μC/cm², with a leakage current density of approximately 4 × 10⁻⁵ A/cm² under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article

This work presents a high-performance novel photodetector based on two-dimensional boron nitride (BN) nanosheets functionalized with gold nanoparticles (Au NPs), offering ultra-broadband photoresponse from 0.25 to 5.9 μm. Operating in both photovoltaic and photoconductive modes, the device features rapid response times (<0.5 ms), high responsivity (up to 1015 mA/W at 250 nm and 2.5 V bias), and thermal stability up to 100 °C. The synthesis process involved CO₂ laser exfoliation of hexagonal boron nitride, followed by gold NP deposition via RF sputtering and thermal annealing. Structural and compositional analyses confirmed the formation of a three-dimensional network of atomically thin BN nanosheets decorated with uniformly distributed gold nanoparticles. This architecture facilitates plasmon-enhanced absorption and efficient charge separation via heterojunction interfaces, significantly boosting photocurrent generation across the deep ultraviolet (DUV), visible, near-infrared (NIR), and mid-infrared (MIR) spectral regions. First-principles calculations support the observed broadband response, confirming bandgap narrowing induced by defects in h-BN and functionalization by gold nanoparticles. The device’s self-driven operation, wide spectral response, and durability under elevated temperatures underscore its strong potential for next-generation broadband, self-powered, and wearable sensing and optoelectronic applications. Full article

By embedding an aluminum-laminated layer within La₂O₃ thin films and subjecting them to high-temperature rapid thermal annealing, a La₂O₃/LaAl_xO_y/La₂O₃ sandwich dielectric was formed. This structure enhances the interface properties with both the silicon substrate and the metal gate electrode, improving current conduction. Comprehensive analysis using X-ray Photoelectron Spectroscopy (XPS) revealed that this novel process not only facilitates the formation of a high-quality lanthanum aluminate layer, as indicated with Al 2p peak at 74.5 eV, but also effectively suppresses silicate layer growth, as supported by the weak Si-O signal from both the Si 2s (153.9 eV) and O 1s (533 eV) peaks at the dielectric/Si interface in the Al-laminated samples. Fourier Transform Infrared (FTIR) spectroscopy revealed a significant reduction in the OH absorption peak at 3608 cm⁻¹ OH-related band centered at 3433 cm⁻¹. These improvements are attributed to the aluminum-laminated layer, which blocks oxygen and hydroxyl diffusion, the LaAl_xO_y layer scavenging interface silicon oxide, and the consumption of oxygen during LaAl_xO_y formation under thermal annealing. Electrical measurements confirmed that the dielectric films exhibited significantly lower interface and oxide trap densities compared to native La₂O₃ samples. This approach provides a promising method for fabricating high-quality lanthanum-based gate dielectric films with controlled dielectric/substrate interactions, making it suitable for nano-CMOS and memristive device applications. Full article

Two different magnetoelastic Metglas materials with distinct shapes were compared as sensing elements for the structural health monitoring of concrete beams. One had a ribbon shape, while the other had a microwire shape. The sensing elements were attached to different concrete beams, and a crack was introduced into each beam. The beams were subjected to flexural vibrations, and their deformations were recorded wirelessly by coils, detecting the magnetic signals emitted due to the magnetoelastic nature of the sensors. Fast Fourier Analysis of the received signal revealed the bending mode frequencies of the beams, which serve as a “signature” of their structural health. In these spectra, the ribbon-shaped sensor exhibited a 1.4-times stronger signal than the microwire sensor. However, the extracted mode frequencies were nearly identical, with differences of less than 1% both before and after damage. This indicates that both sensors can be used equivalently to monitor structural damage in concrete beams. The damage-related relative frequency shifts ranged from −0.01 to −0.03, with similar results for both sensors. Thermal annealing was also studied and appeared to significantly enhance the signal by 10–30%, likely due to the relaxation of internal stresses induced during the rapid solidification synthesis of these materials. This enhancement was more pronounced in the ribbon-shaped sensor. This study is the first to utilize a magnetoelastic microwire sensor for damage detection in concrete beams. Full article

The performance of NiO-based supercapacitor electrodes for energy storage systems was enhanced by doping Cu into NiO thin films (200 nm) using radio-frequency magnetron co-sputtering on 3D porous Ni foam substrates, followed by rapid thermal annealing. The Hall effect measurements demonstrated enhanced electrical conductivity, with resistivity values of 1.244 × 10⁻⁴ Ω·cm. The 3D porous NiO:Cu electrodes significantly increased the specific capacitance and achieved a value of 1809.2 Fg⁻¹, with the NiO:Cu (10 at% Cu) thin films at a scan rate of 5 mVs⁻¹, which is a 2.67-fold increase compared with the undoped NiO films on a glass substrate. The 3D porous NiO:Cu electrodes significantly improved the electrochemical properties of the NiO-based electrode, which resulted in a higher specific capacitance for enhancing the energy storage performance during grid stabilization. Full article

Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k$\mathrm{\Omega }·\mathrm{\mu }$m to 1.57 k$\mathrm{\Omega }·\mathrm{\mu }$m and at the Ni/A-CNT interface from 81.72 k$\mathrm{\Omega }·\mathrm{\mu }$m to 1.17 k$\mathrm{\Omega }·\mathrm{\mu }$m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. Full article

The Fe-36Ni alloy, with ultra-low thermal expansion and stable properties, is essential for aerospace remote sensors and aircraft load-bearing structures, widely used in aerospace. Additive Manufacturing, an emerging rapid prototyping technology with short cycles, high efficiency, and flexibility, addresses complex structural fabrication challenges. While selective laser melting (SLM) enables complex geometry fabrication, post-process treatments (e.g., annealing-induced homogenization, thermal aging for stress relief, surface polishing) remain critical for attaining metallurgical stability in as-built components. The impact of different laser scanning speeds (500 mm/s, 1000 mm/s, 1500 mm/s, 2000 mm/s) on the microstructure and mechanical and thermal expansion properties of the Fe-36Ni alloy fabricated by selective laser melting was studied. The results indicate that all Fe-36Ni alloys predominantly exhibit the γ-phase. Interestingly, a small amount of α precipitates was also observed, which is primarily attributed to the formation of a supercooled region. Notably, at a scanning speed of 1000 mm/s, the Fe-36Ni alloy samples exhibit optimal mechanical properties, with a tensile strength of 439 MPa and an elongation of 49.0%. This improvement is primarily attributed to the enhanced molding quality and grain refinement. The minimum coefficient of thermal expansion occurs at a scanning speed of 2000 mm/s, likely due to the elevated defect density. Full article

In this manuscript, strontium barium titanate (BST) ferroelectric memory film materials for applications in the feasibility of applying to non-volatile RAM devices were obtained and compared. Solutions were synthesized with a proportional ratio and through the deposition of BST films on titanium nitride/silicon substrates using the sol–gel method, using rapid thermal annealing for defect repair and re-crystallization processing. The crystallization structure and surface morphology of annealed and as-deposited BST films were obtained by XPS, XRD, and SEM measurements. Additionally, the ferroelectric and resistive switching properties for the memory window, the maximum capacitance, and the leakage current were examined for Al/BST/TiN and Cu/BST/TiN structure memory devices. In addition, the first-order reaction equation of the decay reaction behavior for the BST film RRAM devices in the reset state revealed that $r=0.19{[O^{2-}]}^1$. Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices. Full article

Flow injection analysis (FIA) is widely used in drug screening, neurotransmitter detection, and water analysis. In this study, we investigated the electrochemical sensing performance of glassy graphene electrodes derived from pyrolyzed positive photoresist films (PPFs) via rapid thermal annealing (RTA) on SiO₂/Si and polycrystalline diamond (PCD). Glassy graphene films fabricated at 800, 900, and 950 °C were characterized using Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM) to assess their structural and morphological properties. Electrochemical characterization in phosphate-buffered saline (PBS, pH 7.4) revealed that annealing temperature and substrate type influence the potential window and double-layer capacitance. The voltammetric response of glassy graphene electrodes was further evaluated using the surface-insensitive [Ru(NH₃)₆]^3+/2+ redox marker, the surface-sensitive [Fe(CN)₆]^3−/4− redox couple, and adrenaline, demonstrating that electron transfer efficiency is governed by annealing temperature and substrate-induced microstructural changes. FIA with amperometric detection showed a linear electrochemical response to adrenaline in the 3–300 µM range, achieving a low detection limit of 1.05 µM and a high sensitivity of 1.02 µA cm⁻²/µM. These findings highlight the potential of glassy graphene as a cost-effective alternative for advanced electrochemical sensors, particularly in biomolecule detection and analytical applications. Full article

Laser annealing plays a significant role in the fabrication of scaled-down semiconductor devices by activating dopant ions and rearranging silicon atoms in ion-implanted silicon wafers, thereby improving material properties. Precise temperature control is crucial in wafer annealing, particularly for repeated processes where repeatability affects uniformity. In this study, we employ a three-dimensional time-dependent thermal simulation model to numerically analyze the multiple static laser annealing processes based on a CO₂ laser with a center wavelength of 9.3 μm and a pulse repetition rate of 10 kHz. The heat transfer equation is solved using a multiphysics coupling approach to accurately simulate the effects of different numbers of CO₂ laser pulses on wafer temperature rise and repeatability. Additionally, a pyrometer is used to collect and convert the surface temperature of the wafer. Radiation intensity is converted to temperature via Planck’s law for real-time monitoring. Post-processing is performed to fit the measured temperature and the actual temperature into a linear relationship, aiding in obtaining the actual temperature under small beam spots. According to the simulation conditions, a wafer annealing device using a CO₂ laser as the light source was independently built for verification, and a stable and uniform annealing effect was realized. Full article

WO₃ electrochromic films have emerged as potential candidates for smart windows due to their cost-effectiveness, fast switching speed, and strong chemical stability. However, the inherent contradiction between the high coloring efficiency of amorphous WO₃ and the cycling durability of crystalline WO₃ remains a critical challenge in practical applications. This study proposes an innovative heterostructure engineering strategy, achieving precise control of the amorphous/crystalline bilayer WO₃ heterointerface (148 nm a-WO₃/115 nm c-WO₃) for the first time through phase boundary regulation, using well-controlled magnetron sputtering and post-deposition thermal annealing processes. Multimodal characterization using XRD, XPS, and SEM indicates that the heterointerface optimizes performance through a dynamic charge transfer mechanism and structural synergistic effects: the optimized bilayer structure achieves 76.57% optical modulation (at 630 nm) under −1.0 V and maintains a ΔT retention rate of 45.02% after 600 cycles, significantly outperforming single amorphous (8.34%) and crystalline films (14.34%). XPS analysis reveals a dynamic equilibrium mechanism involving W⁵⁺/Li⁺ at the interface, and the Li⁺ diffusion coefficient (D₀ = 4.29 × 10⁻¹⁰ cm²/s) confirms that the amorphous layer dominates rapid ion transport, while the crystalline matrix enhances structural stability through its ordered crystalline structure. This study offers a new paradigm for balancing the efficiency and longevity of electrochromic devices, with the compatibility of magnetic sputtering promoting the industrialization process of large-area smart windows. Full article

In this work, micro Zn-doped Ga₂O₃ films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric properties were investigated in detail. The combination of plasma-enhanced ALD of Ga₂O₃ and thermal ALD of ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm³), and smooth interface (average R_q = 0.51 nm) of Zn-doped Ga₂O₃ film. In addition, the thermal engineering of the GZO was achieved by setting the annealing temperature to 400, 600, 800, and 1000 °C, respectively. The GZO film annealed at 800 °C exhibits a typical crystalline structure (Ga₂O₃: β phase, ZnO: hexagonal wurtzite), a lower roughness (average R_q = 2.7 nm), and a higher average breakdown field (16.47 MV/cm). Notably, compared with the pure GZO film, the breakdown field annealed at 800 °C increases by 180%. The O_V content in the GZO after annealing at 800 °C is as low as 34.8%, resulting in a remarkable enhancement of electrical properties. These research findings offer a new perspective on the high-quality ALD-doped materials and application of GZO in high-power electronics and high-sensitive devices. Full article

Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications. Full article

A facile solvo-hydrothermal method was used to synthesize sub-100 nm diameter TiO₂/α-Fe₂O₃@SiO₂ nanorods (TiO₂/HNRs@SiO₂). Thermal annealing of TiO₂/HNRs@SiO₂ activated the photosensitizing crystalline TiO₂ domains containing mixed anatase and rutile phases. The photocatalytic degradation of methylene blue (MB), conducted using thermally annealed TiO₂/HNRs@SiO₂ photocatalysts, was successfully demonstrated with ~95% MB removal efficiency under mild conditions of pH = ~7 and room temperature using ~150 min of solar irradiation. The enhanced removal efficiency was attributed to the rapid adsorption of MB onto the TiO₂/HNRs@SiO₂ surface via favorable electrostatic interactions and the synergistic integration of α-Fe₂O₃ and TiO₂ into nanorod heterostructures with bandgaps of 1.99–2.03 eV, allowing them to absorb visible light for efficient photocatalytic decomposition. This study provides insights into designing photocatalysts with improved selectivity for sustainable water treatment and environmental remediation. Full article

{CdO/ZnO}_m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies of the as-grown and annealed samples confirms the presence of a periodic superlattice structure. The properties of as-grown and annealed SLs deposited on c-oriented sapphire were investigated by transmission electron microscopy, X-ray diffraction and temperature dependent PL studies. The deformation of the SLs structure was observed after rapid thermal annealing. As the thermal annealing temperature increases, the diffusion of Cd ions from the quantum well layers into the ZnO barrier increases. The formation of CdZnO layers causes changes in the luminescence spectrum in the form of peak shifts, broadening and changes in the spacing of the satellite peaks visible in X-ray analysis. Full article