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Open AccessArticle

Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off

1
Korea Photonics Technology Institute (KOPTI), Gwangju 500-460, Korea
2
Department of Photonic Engineering, Chosun University, Gwangju 501-759, Korea
3
Department of Mechanical Engineering, University of Houston, Houston, TX 77204-2004, USA
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(20), 4243; https://doi.org/10.3390/app9204243
Received: 18 September 2019 / Revised: 2 October 2019 / Accepted: 6 October 2019 / Published: 11 October 2019
(This article belongs to the Special Issue GaN-Based Light-Emitting Diodes)
A much simplified method for transferring Gallium nitride (GaN) light emitting didoes (LEDs) to an unusual substrate, such as glass, Si, polyethylene terephthalate, or polyurethane, was demonstrated with spontaneously formed vertical tethers during chemical lift-off (CLO), without requiring a sacrificial layer or extra process steps. The LED arrays resided on a stamp that was coated with an adhesive layer. After the layer with the LEDs was transferred to the new substrates, the stamp was removed by acetone to complete the preparation. Over 3 × 3 cm2 LED arrays transferred to various substrates without any damage and misorientation. We also found that the optical and electrical characteristics improved after transfer due to decease in built-in stress. This simple and practical method is expected to greatly facilitate the development of transferrable full color GaN microLEDs on various substrates with either greatly reduced or no damage. View Full-Text
Keywords: GaN; light emitting diode; chemical lift-off; transfer GaN; light emitting diode; chemical lift-off; transfer
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MDPI and ACS Style

Kim, J.-Y.; Cho, Y.-H.; Park, H.-S.; Ryou, J.-H.; Kwon, M.-K. Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off. Appl. Sci. 2019, 9, 4243.

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