Ibarlucea, B.; Römhildt, L.; Zörgiebel, F.; Pregl, S.; Vahdatzadeh, M.; Weber, W.M.; Mikolajick, T.; Opitz, J.; Baraban, L.; Cuniberti, G.
Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors. Appl. Sci. 2018, 8, 950.
https://doi.org/10.3390/app8060950
AMA Style
Ibarlucea B, Römhildt L, Zörgiebel F, Pregl S, Vahdatzadeh M, Weber WM, Mikolajick T, Opitz J, Baraban L, Cuniberti G.
Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors. Applied Sciences. 2018; 8(6):950.
https://doi.org/10.3390/app8060950
Chicago/Turabian Style
Ibarlucea, Bergoi, Lotta Römhildt, Felix Zörgiebel, Sebastian Pregl, Maryam Vahdatzadeh, Walter M. Weber, Thomas Mikolajick, Jörg Opitz, Larysa Baraban, and Gianaurelio Cuniberti.
2018. "Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors" Applied Sciences 8, no. 6: 950.
https://doi.org/10.3390/app8060950
APA Style
Ibarlucea, B., Römhildt, L., Zörgiebel, F., Pregl, S., Vahdatzadeh, M., Weber, W. M., Mikolajick, T., Opitz, J., Baraban, L., & Cuniberti, G.
(2018). Gating Hysteresis as an Indicator for Silicon Nanowire FET Biosensors. Applied Sciences, 8(6), 950.
https://doi.org/10.3390/app8060950