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Appl. Sci. 2018, 8(5), 735; https://doi.org/10.3390/app8050735

Control of Carrier Concentration by Ag Doping in N-Type Bi2Te3 Based Compounds

1
Thermoelectric Conversion Research Center, Korea Electrotechnology Research Institute, Changwon 51543, Korea
2
Center for Convergence Property Measurement, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
3
Department of Electrical Engineering, KAIST, Daejeon 34141, Korea
4
Mineral Resources Division, Korea Institute of Geoscience and Mineral Resources, Daejeon 34132, Korea
5
Department of Materials Science and Engineering, Hanbat National University, Daejeon 31458, Korea
*
Author to whom correspondence should be addressed.
Received: 30 March 2018 / Revised: 23 April 2018 / Accepted: 3 May 2018 / Published: 6 May 2018
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Abstract

Many elements have been used as dopants to enhance the thermoelectric performance of Bi2Te3-related materials. Among them, Ag’s effect on thermoelectric properties, where Ag acts as a donor or acceptor, remains unclear. To elucidate the role of Ag in n-type Bi2Te3 based compounds, Ag was added to n-type (Bi0.9Sb0.1)2(Te0.85Se0.15)3. As the amount of Ag was increased, the electron concentration decreased, which means Ag acted as an acceptor. The added Ag atoms were found to occupy interstitial sites in the hexagonal lattices, as confirmed by X-ray analysis and first principles calculations. The reduction in electron concentration was attributed to the interaction between the interstitial Ag and intrinsic defects. View Full-Text
Keywords: thermoelectric; Bi2Te3; Ag; defects; carrier concentration thermoelectric; Bi2Te3; Ag; defects; carrier concentration
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Lee, J.K.; Son, J.H.; Kim, Y.-I.; Ryu, B.; Cho, B.J.; Kim, S.; Park, S.-D.; Oh, M.-W. Control of Carrier Concentration by Ag Doping in N-Type Bi2Te3 Based Compounds. Appl. Sci. 2018, 8, 735.

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