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Appl. Sci. 2016, 6(7), 187;

Stability of Single Electron Devices: Charge Offset Drift

National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
Authors to whom correspondence should be addressed.
Academic Editors: Greg Snider and Alexei Orlov
Received: 14 April 2016 / Revised: 21 May 2016 / Accepted: 1 June 2016 / Published: 29 June 2016
(This article belongs to the Special Issue Applied Single-Electron Transistors)
Full-Text   |   PDF [16376 KB, uploaded 29 June 2016]   |  


Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO2-based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications. View Full-Text
Keywords: single electron devices; charge offset drift; stability single electron devices; charge offset drift; stability

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Stewart, M.D., Jr.; Zimmerman, N.M. Stability of Single Electron Devices: Charge Offset Drift. Appl. Sci. 2016, 6, 187.

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