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Journal: Appl. Sci., 2021
Volume: 11
Number: 2210

Article: Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Authors: by Bartosz Lasek, Przemysław Trochimiuk, Rafał Kopacz and Jacek Rąbkowski
Link: https://www.mdpi.com/2076-3417/11/5/2210

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