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Journal: Appl. Sci., 2021
Volume: 11
Number: 2210
Article:
Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Authors:
by
Bartosz Lasek, Przemysław Trochimiuk, Rafał Kopacz and Jacek Rąbkowski
Link:
https://www.mdpi.com/2076-3417/11/5/2210
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