Article Versions Notes

Wilmart Q, Boukhicha M, Graef H, Mele D, Palomo J, Rosticher M, Taniguchi T, Watanabe K, Bouchiat V, Baudin E, et al. High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation. Applied Sciences. 2020; 10(2):446. https://doi.org/10.3390/app10020446

Wilmart, Quentin, Mohamed Boukhicha, Holger Graef, David Mele, Jose Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, and et al. 2020. "High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation" Applied Sciences 10, no. 2: 446. https://doi.org/10.3390/app10020446

Wilmart, Q., Boukhicha, M., Graef, H., Mele, D., Palomo, J., Rosticher, M., Taniguchi, T., Watanabe, K., Bouchiat, V., Baudin, E., Berroir, J.-M., Bocquillon, E., Fève, G., Pallecchi, E., & Plaçais, B. (2020). High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation. Applied Sciences, 10(2), 446. https://doi.org/10.3390/app10020446