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Open AccessArticle

Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
*
Authors to whom correspondence should be addressed.
Crystals 2019, 9(12), 634; https://doi.org/10.3390/cryst9120634
Received: 4 November 2019 / Revised: 24 November 2019 / Accepted: 27 November 2019 / Published: 28 November 2019
(This article belongs to the Special Issue Advances in Thin Film Materials and Devices)
We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces. View Full-Text
Keywords: hysteresis reduction; solution process; zirconia gate insulator; crosslinked PVP stacked; pentacene TFT hysteresis reduction; solution process; zirconia gate insulator; crosslinked PVP stacked; pentacene TFT
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MDPI and ACS Style

Kwon, J.-H.; Choi, J.-H.; Bae, J.-H.; Park, J. Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films. Crystals 2019, 9, 634.

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