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Crystals 2017, 7(5), 123;

Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
Author to whom correspondence should be addressed.
Academic Editor: Ikai Lo
Received: 15 March 2017 / Revised: 18 April 2017 / Accepted: 21 April 2017 / Published: 27 April 2017
(This article belongs to the Special Issue Advances in GaN Crystals and Their Applications)
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The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after the substrate temperature reaches the growth temperature [Process N2(GT)] causes the interface to become rough due to the thermal decomposition of sapphire. Self-separation occasionally occurs with the Process N2(GT), suggesting that the rough interface generates self-separating films with little strain. On the other hand, supplying N2 beginning at room temperature forms a relatively smooth interface with voids, which can be realized by the reaction between a nitrided sapphire surface and an Al source. View Full-Text
Keywords: AlN; EVPE; self-separation; void AlN; EVPE; self-separation; void

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Kishimoto, K.; Funato, M.; Kawakami, Y. Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE. Crystals 2017, 7, 123.

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