Crystals 2017, 7(5), 123; https://doi.org/10.3390/cryst7050123
Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Academic Editor: Ikai Lo
Received: 15 March 2017 / Revised: 18 April 2017 / Accepted: 21 April 2017 / Published: 27 April 2017
(This article belongs to the Special Issue Advances in GaN Crystals and Their Applications)
Abstract
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after the substrate temperature reaches the growth temperature [Process N2(GT)] causes the interface to become rough due to the thermal decomposition of sapphire. Self-separation occasionally occurs with the Process N2(GT), suggesting that the rough interface generates self-separating films with little strain. On the other hand, supplying N2 beginning at room temperature forms a relatively smooth interface with voids, which can be realized by the reaction between a nitrided sapphire surface and an Al source. View Full-TextKeywords:
AlN; EVPE; self-separation; void
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Kishimoto, K.; Funato, M.; Kawakami, Y. Effects of Al and N2 Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE. Crystals 2017, 7, 123.
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