Aluminum nitride has been widely used as heat-management material for large-scale integrated circuits and semiconductor packages because of its excellent insulation, high thermal conductivity, low dielectric constant and loss, similar expansion coeff...
This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. Th...
This paper presents a recent study on the synthesis of AlN nanowires. AlN nanowires were successfully prepared on sapphire substrate by the Al-Sn flux method. The obtained nanowires were hundreds of nanometers in diameter and tens of microns in lengt...
In this work, a sputtered AlN template is employed to grow high-quality AlGaN/GaN heterostructures, and the effects of AlN nucleation layer growth conditions on the structural and electrical properties of heterostructures are investigated in detail....
In this paper, 8.2AlN/Mg–8Al composites reinforced with in situ and/or ex situ AlN particles have been synthesized. The in situ-formed AlN particles are nano-sized, performing as particle chains. It has been clarified that the in situ AlN parti...
Aluminum dross (AD) is a hazardous waste that contains valuable metallic Al and reactive aluminum nitride (AlN). The intergrowth of Al and AlN presents a challenge to Al recovery and AlN removal. In the current work, a mechanical milling method was d...
The effect of cooling rate on the evolution of AlN inclusions precipitated during solidification in FeCrAl stainless steel was investigated using an experimental study and thermodynamic and kinetic calculations. The number and size of AlN inclusions...
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively....
We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulato...
In this report, the development of physical vapor transport (PVT) methods for bulk aluminum nitride (AlN) crystal growth is reviewed. Three modified PVT methods with different features including selected growth at a conical zone, freestanding growth...
In this study, the hydrolysis behavior and kinetics of AlN in aluminum dross (AD) were investigated in order to better identify the steps controlling the AlN hydrolysis reaction and the factors influencing the hydrolysis rate to enhance the removal e...
We report on high precision high speed micromachining of Al2O3 and AlN using pulsed near infrared fiber laser. Ablation thresholds are determined to be 30 J/cm2 for alumina and 18 J/cm2 for aluminum nitride. The factors influencing the efficiency and...
In this study, AlGaN/GaN heterostructure field-effect transistors (HFETs) with an AlN cap layer and a GaN cap layer were fabricated. The devices were of different sizes. Capacitance–voltage (C-V) and current–voltage (I-V) curves were meas...
Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N) are presented and compared regarding their static deflection. Two chip designs with 2 × 3 mm2 (Design 1) and 4 × 6 mm2 (Design 2) footpri...
The GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing technique...
Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electr...
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after th...
Face-to-face annealed sputter-deposited aluminum nitride (AlN) templates (FFA Sp-AlN) are a promising material for application in deep-ultraviolet light-emitting diodes (DUV-LEDs), whose performance is directly related to the crystallinity of the AlN...
AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on str...
A theoretical insight into the structural evolution of AlN atomic clusters and the chemisorption of several common alloying elements on a large cluster has been performed in the framework of state-of-the-art density functional theory calculations. We...
Both the chemical shift and quadrupole coupling tensors for
High temperature characteristics of langasite surface acoustic wave (SAW) devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SA...
Aluminum nitride (AlN) ceramic materials have relatively low thermal conductivity and poor heat dissipation performance, and are increasingly unsuitable for high-power LED packaging. In this study, diamond films were deposited on AlN ceramic substrat...
The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization...
The Mg-Al-RE series heat-resistant magnesium alloys are applied in automotive engine and transmission system components due to their high-temperature performance. However, after serving at a high temperature for a long time, the Al11RE3 phase coarsen...
We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN buffer layer by metalorganic chemical vapor deposition. We have studied the influence of the AlN buffer layer on the polarity, crystalline quality, and...
With the growing demand for more efficient power conversion and silicon reaching its theoretical limit, wide bandgap semiconductor devices are emerging as a potential solution. For instance, Gallium Nitride (GaN)-based high-electron-mobility transist...
Aluminum nitride (AlN) crystals with areas ranging from 1 mm2 to 2 mm2 were successfully grown through spontaneous nucleation at 1700 °C using a modified vapor transport method. In this approach, Cu–Al alloy served as the source of aluminum...
In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 °C were integrated with 3.7-μm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Unde...
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMT) with a low-temperature epitaxy (LTE)-grown single crystalline AlN gate dielectric were demonstrated for the first time and the post-gate annealing effects at 400 &de...
The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystal...
The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (P...
We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-...
As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing appli...
Due to its good thermal conductivity and small thermal expansion coefficient, aluminum nitride (AlN) is an excellent material for thermal shock resistance. Recently, carbon (C) doping has emerged as a potential strategy for tailoring the properties o...
As a route to the formation of regular arrays of AlN nanorods, in contrast to other III-V materials, the use of selective area growth via metal organic vapor phase epitaxy (MOVPE) has so far not been successful. Therefore, in this work we report the...
Aluminum dross, as a hazardous waste product, causes harm to the environment and humans, since the AlN it contains chemically reacts with water to produce ammonia. In the present study, a formula for modifying the AlN content in aluminum dross is pro...
This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin f...
AlN thin film is widely used in piezoelectric MEMS devices, and the accurate characterizations of its material coefficients are critical for the optimization of the AlN thin film process and the design of AlN thin-film-based devices. However, it is d...
AlN is a piezoelectric material used in telecommunication applications due to its high surface acoustic wave (SAW) velocity, stability, and mechanical strength. Its performance is linked to film quality, and one method to achieve high-quality films g...
We have investigated the effect of high-temperature nitridation and buffer layer on the semi-polar aluminum nitride (AlN) films grown on sapphire by hydride vapor phase epitaxy (HVPE). It is found the high-temperature nitridation and buffer layer at...
The appropriate distribution of temperature in the growth system is critical for obtaining a large size high quality aluminum nitride (AlN) single crystal by the physical vapor transport (PVT) method. As the crystal size increases, the influence of t...
Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of Al...
High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with different polar...
Here, we report on the epitaxial growth of GaN on patterned SiO2-covered cone-shaped patterned sapphire surfaces (PSS). Physical vapor deposition (PVD) AlN films were used as buffers deposited on the SiO2-PSS substrates. The gallium nitride (GaN) gro...
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective....
In the present work, a single-crystalline epitaxial nonpolar a-plane AlN film with in-plane two-folder symmetries was successfully achieved on an r-plane sapphire substrate, by combining physical vapor deposition and a high-temperature annealing tech...
Aluminum nitride (AlN) is a material of wide interest in the optoelectronics and high-power electronics industry. The deposition of AlN thin films at elevated temperatures is a well-established process, but its implementation on flexible substrates w...
In this work, Al2O3-AlN composite ceramics with high bending strength and thermal conductivity were fabricated by Digital Light Processing (DLP). The influence of AlN content on the rheological and cure behavior of Al2O3-AlN suspensions, as well as t...
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