Yasunaga, H.; Yano, K.; Tanioka, Y.; Fujimoto, S.; Kanemitsu, S.; Sun, Y.
Negative Capacitance Effect at Interface Between Si Wafers with Undulating Surfaces. Crystals 2025, 15, 798.
https://doi.org/10.3390/cryst15090798
AMA Style
Yasunaga H, Yano K, Tanioka Y, Fujimoto S, Kanemitsu S, Sun Y.
Negative Capacitance Effect at Interface Between Si Wafers with Undulating Surfaces. Crystals. 2025; 15(9):798.
https://doi.org/10.3390/cryst15090798
Chicago/Turabian Style
Yasunaga, Hikaru, Kota Yano, Yuki Tanioka, Sota Fujimoto, Shigeru Kanemitsu, and Yong Sun.
2025. "Negative Capacitance Effect at Interface Between Si Wafers with Undulating Surfaces" Crystals 15, no. 9: 798.
https://doi.org/10.3390/cryst15090798
APA Style
Yasunaga, H., Yano, K., Tanioka, Y., Fujimoto, S., Kanemitsu, S., & Sun, Y.
(2025). Negative Capacitance Effect at Interface Between Si Wafers with Undulating Surfaces. Crystals, 15(9), 798.
https://doi.org/10.3390/cryst15090798