Ahmed Ali, A.M.; Ahmed, N.M.; Kabir, N.A.; Algadri, N.A.; AL-Diabat, A.M.; Wadi, I.A.; Alsadig, A.; Aldaghri, O.A.; Ibnaouf, K.H.
Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals 2023, 13, 314.
https://doi.org/10.3390/cryst13020314
AMA Style
Ahmed Ali AM, Ahmed NM, Kabir NA, Algadri NA, AL-Diabat AM, Wadi IA, Alsadig A, Aldaghri OA, Ibnaouf KH.
Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals. 2023; 13(2):314.
https://doi.org/10.3390/cryst13020314
Chicago/Turabian Style
Ahmed Ali, Amal Mohamed, Naser M. Ahmed, Norlaili A. Kabir, Natheer A. Algadri, Ahmad M. AL-Diabat, I. A. Wadi, Ahmed Alsadig, Osamah A. Aldaghri, and Khalid H. Ibnaouf.
2023. "Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity" Crystals 13, no. 2: 314.
https://doi.org/10.3390/cryst13020314
APA Style
Ahmed Ali, A. M., Ahmed, N. M., Kabir, N. A., Algadri, N. A., AL-Diabat, A. M., Wadi, I. A., Alsadig, A., Aldaghri, O. A., & Ibnaouf, K. H.
(2023). Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity. Crystals, 13(2), 314.
https://doi.org/10.3390/cryst13020314
