Article Versions Notes

Hasan S, Jewel MU, Crittenden SR, Lee D, Avrutin V, Özgür Ü, Morkoç H, Ahmad I. MOCVD-grown β-Ga₂O₃ as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor. Crystals. 2023; 13(2):231. https://doi.org/10.3390/cryst13020231

Hasan, Samiul, Mohi Uddin Jewel, Scott R. Crittenden, Dongkyu Lee, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç, and Iftikhar Ahmad. 2023. "MOCVD-grown β-Ga₂O₃ as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor" Crystals 13, no. 2: 231. https://doi.org/10.3390/cryst13020231

Hasan, S., Jewel, M. U., Crittenden, S. R., Lee, D., Avrutin, V., Özgür, Ü., Morkoç, H., & Ahmad, I. (2023). MOCVD-grown β-Ga₂O₃ as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor. Crystals, 13(2), 231. https://doi.org/10.3390/cryst13020231