Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals
1
Institute of Numerical Modelling, University of Latvia, Jelgavas Street 3, LV-1004 Riga, Latvia
2
Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: George Z. Voyiadjis
Crystals 2022, 12(2), 174; https://doi.org/10.3390/cryst12020174
Received: 31 December 2021
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Revised: 14 January 2022
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Accepted: 19 January 2022
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Published: 25 January 2022
(This article belongs to the Section Crystal Engineering)
Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement with the experiment. To better explain the experimentally observed dislocation distribution, the Alexander–Haasen model was extended with a critical stress threshold below which no dislocation multiplication occurs. The results are compared with the experiment, and some remaining shortcomings in the model are discussed.
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Keywords:
computer simulation; line defects (dislocations); stresses; semiconducting silicon; floating zone technique
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MDPI and ACS Style
Sabanskis, A.; Dadzis, K.; Menzel, R.; Virbulis, J. Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals. Crystals 2022, 12, 174. https://doi.org/10.3390/cryst12020174
AMA Style
Sabanskis A, Dadzis K, Menzel R, Virbulis J. Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals. Crystals. 2022; 12(2):174. https://doi.org/10.3390/cryst12020174
Chicago/Turabian StyleSabanskis, Andrejs, Kaspars Dadzis, Robert Menzel, and Jānis Virbulis. 2022. "Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals" Crystals 12, no. 2: 174. https://doi.org/10.3390/cryst12020174
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