Hattori, A.N.; Osaka, A.I.; Hattori, K.; Naitoh, Y.; Shima, H.; Akinaga, H.; Tanaka, H.
Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals 2020, 10, 631.
https://doi.org/10.3390/cryst10080631
AMA Style
Hattori AN, Osaka AI, Hattori K, Naitoh Y, Shima H, Akinaga H, Tanaka H.
Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals. 2020; 10(8):631.
https://doi.org/10.3390/cryst10080631
Chicago/Turabian Style
Hattori, Azusa N., Ai I. Osaka, Ken Hattori, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, and Hidekazu Tanaka.
2020. "Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure" Crystals 10, no. 8: 631.
https://doi.org/10.3390/cryst10080631
APA Style
Hattori, A. N., Osaka, A. I., Hattori, K., Naitoh, Y., Shima, H., Akinaga, H., & Tanaka, H.
(2020). Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals, 10(8), 631.
https://doi.org/10.3390/cryst10080631