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Article

Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure

by
Azusa N. Hattori
1,*,
Ai I. Osaka
1,
Ken Hattori
2,
Yasuhisa Naitoh
3,
Hisashi Shima
3,
Hiroyuki Akinaga
3 and
Hidekazu Tanaka
1
1
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
2
Division of Materials Science, Graduate School of Science and Technology, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
3
National Institute of Advanced Industrial Science and Technology, Higashi 1-1-1, Tsukuba, Ibaraki 305-8565, Japan
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(8), 631; https://doi.org/10.3390/cryst10080631
Submission received: 29 June 2020 / Revised: 20 July 2020 / Accepted: 21 July 2020 / Published: 22 July 2020
(This article belongs to the Special Issue Electronic Phenomena of Transition Metal Oxides)
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Abstract

Functional oxides with strongly correlated electron systems, such as vanadium dioxide, manganite, and so on, show a metal-insulator transition and an insulator-metal transition (MIT and IMT) with a change in conductivity of several orders of magnitude. Since the discovery of phase separation during transition processes, many researchers have been trying to capture a nanoscale electronic domain and investigate its exotic properties. To understand the exotic properties of the nanoscale electronic domain, we studied the MIT and IMT properties for the VO2 electronic domains confined into a 20 nm length scale. The confined domains in VO2 exhibited an intrinsic first-order MIT and IMT with an unusually steep single-step change in the temperature dependent resistivity (R-T) curve. The investigation of the temperature-sweep-rate dependent MIT and IMT properties revealed the statistical transition behavior among the domains. These results are the first demonstration approaching the transition dynamics: the competition between the phase-transition kinetics and experimental temperature-sweep-rate in a nano scale. We proposed a statistical transition model to describe the correlation between the domain behavior and the observable R-T curve, which connect the progression of the MIT and IMT from the macroscopic to microscopic viewpoints.
Keywords: VO2; metal-insulator transition; phase separation; electronic phase; first-order transition; spatial confinement effect VO2; metal-insulator transition; phase separation; electronic phase; first-order transition; spatial confinement effect
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MDPI and ACS Style

Hattori, A.N.; Osaka, A.I.; Hattori, K.; Naitoh, Y.; Shima, H.; Akinaga, H.; Tanaka, H. Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals 2020, 10, 631. https://doi.org/10.3390/cryst10080631

AMA Style

Hattori AN, Osaka AI, Hattori K, Naitoh Y, Shima H, Akinaga H, Tanaka H. Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals. 2020; 10(8):631. https://doi.org/10.3390/cryst10080631

Chicago/Turabian Style

Hattori, Azusa N., Ai I. Osaka, Ken Hattori, Yasuhisa Naitoh, Hisashi Shima, Hiroyuki Akinaga, and Hidekazu Tanaka. 2020. "Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure" Crystals 10, no. 8: 631. https://doi.org/10.3390/cryst10080631

APA Style

Hattori, A. N., Osaka, A. I., Hattori, K., Naitoh, Y., Shima, H., Akinaga, H., & Tanaka, H. (2020). Investigation of Statistical Metal-Insulator Transition Properties of Electronic Domains in Spatially Confined VO2 Nanostructure. Crystals, 10(8), 631. https://doi.org/10.3390/cryst10080631

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