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Open AccessArticle

Abrupt Change Effect of Bandgap Energy on Quantum System of Silicon Nanowire

1
College of materials and metallurgy, Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China
2
State Key Laboratory of Environment Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
3
Department of Physics, Hainan Normal University, Haikou 571158, China
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(5), 340; https://doi.org/10.3390/cryst10050340
Received: 7 April 2020 / Revised: 23 April 2020 / Accepted: 24 April 2020 / Published: 26 April 2020
(This article belongs to the Special Issue Growth and Evaluation of Crystalline Silicon (Volume II))
In the quantum system of Si nanowire (NW), the energy bandgap obviously increases with decreasing radius size of NW, in which the quantum confinement (QC) effect plays a main role. Furthermore, the simulation result demonstrated that the direct bandgap can be obtained as the NW diameter is smaller than 3 nm in Si NW with (001) direction. However, it is discovered in the simulating calculation that the QC effect disappears as the NW diameter arrives at size of monoatomic line, in which its bandgap sharply deceases where the abrupt change effect in bandgap energy occurs near the idea quantum wire. In the experiment, we fabricated the Si NW structure by using annealing and pulsed laser deposition methods, in which a novel way was used to control the radius size of Si NW by confining cylinder space of NW in nanolayer. It should have a good application on optic-electronic waveguide of silicon chip. View Full-Text
Keywords: silicon nanowire; abrupt change effect; quantum confinement; bandgap; simulating calculation silicon nanowire; abrupt change effect; quantum confinement; bandgap; simulating calculation
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MDPI and ACS Style

Huang, Z.-M.; Liu, S.-R.; Peng, H.-Y.; Li, X.; Huang, W.-Q. Abrupt Change Effect of Bandgap Energy on Quantum System of Silicon Nanowire. Crystals 2020, 10, 340.

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