Next Article in Journal
Binary Liquid Crystal Mixtures Based on Schiff Base Derivatives with Oriented Lateral Substituents
Next Article in Special Issue
Enhanced Electrocaloric Effect in 0.73Pb(Mg1/3Nb2/3)O3-0.27PbTiO3 Single Crystals via Direct Measurement
Previous Article in Journal
Hexnuclear Cadmium(II) Cluster Constructed from Tris(2-methylpyridyl)amine (TPA) and Azides
Previous Article in Special Issue
Structure and Electrical Properties of Na0.5Bi0.5TiO3 Epitaxial Films with (110) Orientation
Open AccessArticle

Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

College of Material Science and Engineering, Sichuan University, Chengdu 610064, China
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(4), 318; https://doi.org/10.3390/cryst10040318
Received: 30 March 2020 / Revised: 13 April 2020 / Accepted: 17 April 2020 / Published: 19 April 2020
(This article belongs to the Special Issue Synthesis and Characterization of Ferroelectrics)
Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications. View Full-Text
Keywords: BSZT thin films; capacitance properties; RF magnetron sputtering BSZT thin films; capacitance properties; RF magnetron sputtering
Show Figures

Figure 1

MDPI and ACS Style

Chen, X.; Mo, T.; Huang, B.; Liu, Y.; Yu, P. Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications. Crystals 2020, 10, 318.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop